公开(公告)号：US06952334B2

公开(公告)日：2005-10-04

申请号：US10681813

申请日：2003-10-07

Applicant: Alan Richard Ball ,  Alejandro Lara-Ascorra

Inventor： Alan Richard Ball ,  Alejandro Lara-Ascorra

IPC: H02M7/12 ,  G05F1/40 ,  H02H9/08 ,  H02M7/04

CPC classification number: G05F1/40

Abstract: A power supply system (10) forms an active zone that facilitates the power supply system (10) enabling an output transistor (37) when the input voltage (30) is between a first voltage value and a second voltage value. When the output transistor is enabled, it forms a load current (35) having an instantaneous value that when averaged over the period of the input signal results in a desired average value of the load current.

Abstract translation: 当输入电压（30）在第一电压值和第二电压值之间时，电源系统（10）形成有助于电源系统（10）使能输出晶体管（37）的有效区域。 当输出晶体管使能时，它形成具有瞬时值的负载电流（35），当输入信号的周期平均时，导致负载电流的期望平均值。

公开(公告)号：US06271712B1

公开(公告)日：2001-08-07

申请号：US09287279

申请日：1999-04-07

Applicant: Alan Richard Ball

Inventor： Alan Richard Ball

IPC: H01J1982

CPC classification number: H02M7/217 ,  H02M3/1588 ,  H02M3/33592 ,  Y02B70/1466 ,  Y02B70/1475

Abstract: A synchronous rectifier circuit (10) includes a polarity comparator (14) that generates a signal to a driver circuit (16) for controlling the voltage at the gate of a power MOSFET (60). The power MOSFET (60) is switched to operate in the conduction mode and short out a parasitic diode (62) when the diode is forward biased. The power MOSFET (60) is switched to operate in the nonconduction mode when the parasitic diode (62) is reverse biased. A bias supply circuit (12) uses a capacitor (70) to generate a regulated internal bias that provides power to the polarity comparator (14) and to the driver circuit (16). The internal bias allows the power MOSFET (60) to provide a current conduction that is substantially isolated from the changes in voltage levels at the terminals (64, 66) of the synchronous rectifier circuit (10).

Abstract translation: 同步整流电路（10）包括极性比较器（14），其向驱动电路（16）产生信号，用于控制功率MOSFET（60）的栅极处的电压。 当二极管被正向偏置时，功率MOSFET（60）被切换为工作在导通模式并使寄生二极管（62）短路。 当寄生二极管（62）被反向偏置时，功率MOSFET（60）被切换为工作在非导通模式。 偏置电源电路（12）使用电容器（70）产生向极性比较器（14）和驱动器电路（16）提供电力的调节内部偏置。 内部偏置允许功率MOSFET（60）提供与同步整流电路（10）的端子（64,66）处的电压电平的变化基本隔离的电流传导。