公开(公告)号：US06204074B1

公开(公告)日：2001-03-20

申请号：US08895542

申请日：1997-07-17

申请人： Allan Bertolet ,  James Fiore ,  Eberhard Gramatzki

发明人： Allan Bertolet ,  James Fiore ,  Eberhard Gramatzki

IPC分类号： H01L2166

CPC分类号： H01L22/32 ,  G01R3/00 ,  G01R31/2886 ,  H01L23/528 ,  H01L2224/0392 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/13

摘要： A method of fabrication are provided in which permanent external electrical connection to active circuitry in a semiconductor structure can be made through either a wire bond pad or metal bump formed thereon. A final metallization including a wire bond pad is disposed over and electrically connected with the active circuitry. An insulating material film is disposed over the final metallization leaving the wire bond pad and a portion of the final metallization laterally displaced from the pad exposed. A metal bump contacts the laterally displayed exposed portion of the final metallization. The wire bond pad is electrically coupled with and laterally displaced from the metal bump through the final metallization. The metal bump and wire bond pad are configured to facilitate electrical connection of the semiconductor structure with an external connector, such as a modular packaging substrate. The structure may also be used for testing and burning in a semiconductor die without direct physical contact of the external testing device to the wire bond pad.

摘要翻译： 提供了一种制造方法，其中可以通过形成在其上的引线接合焊盘或金属凸块来制造半导体结构中的有源电路的永久外部电连接。 包括引线接合焊盘的最终金属化被布置在有源电路上并与有源电路电连接。 绝缘材料膜设置在离开引线接合焊盘的最终金属化物上，并且最终金属化的一部分从暴露的焊盘横向移位。 金属凸块接触最终金属化的横向显示的暴露部分。 引线接合焊盘与金属凸块通过最后的金属化电耦合并且横向移位。 金属凸块和引线接合焊盘被构造成便于半导体结构与诸如模块化封装基板的外部连接器的电连接。 该结构也可用于在半导体管芯中进行测试和燃烧，而不将外部测试装置与引线接合焊盘直接物理接触。

公开(公告)号：US5844317A

公开(公告)日：1998-12-01

申请号：US686855

申请日：1996-07-26

申请人： Allan Bertolet ,  James Fiore ,  Eberhard Gramatski

发明人： Allan Bertolet ,  James Fiore ,  Eberhard Gramatski

IPC分类号： G01R3/00 ,  G01R31/28 ,  H01L23/528 ,  H01L23/58 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L22/32 ,  G01R3/00 ,  G01R31/2884 ,  H01L23/528 ,  H01L2224/13

摘要： A semiconductor structure and method of fabrication are provided in which permanent external electrical connection to active circuitry in the structure can be made through either a wire bond pad or metal bump formed thereon. A final metallization including a wire bond pad is disposed over and electrically connected with the active circuitry. An insulating material film is disposed over the final metallization leaving the wire bond pad and a portion of the final metallization laterally displaced from the pad exposed. A metal bump contacts the laterally displaced exposed portion of the final metallization. The wire bond pad is electrically coupled with and laterally displaced from the metal bump through the final metallization. The metal bump and wire bond pad are configured to facilitate electrical connection of the semiconductor structure with an external connector, such as a modular packaging substrate. The structure may also be used for testing and burning in a semiconductor die without direct physical contact of the external testing device to the wire bond pad.

摘要翻译： 提供半导体结构和制造方法，其中可以通过形成在其上的引线接合焊盘或金属凸块来制造结构中的有源电路的永久外部电连接。 包括引线接合焊盘的最终金属化被布置在有源电路上并与有源电路电连接。 绝缘材料膜设置在离开引线接合焊盘的最终金属化物上，并且最终金属化的一部分从暴露的焊盘横向移位。 金属凸块接触最终金属化的横向移位的暴露部分。 引线接合焊盘与金属凸块通过最后的金属化电耦合并且横向移位。 金属凸块和引线接合焊盘被构造成便于半导体结构与诸如模块化封装基板的外部连接器的电连接。 该结构也可用于在半导体管芯中进行测试和燃烧，而不将外部测试装置与引线接合焊盘直接物理接触。