公开(公告)号：US20140141563A1

公开(公告)日：2014-05-22

申请号：US14173324

申请日：2014-02-05

申请人： Alliance For Sustainable Energy, LLC

发明人： Howard M. Branz ,  Charles W. Teplin ,  Pauls Stradins

IPC分类号： H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/022425 ,  H01L31/036 ,  H01L31/0368 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/547 ,  Y02P70/521

摘要： Systems and Methods for back contact to film silicon on metal for photovoltaic cells are provided. In one embodiment, a method for creating a conductive pathway in a photovoltaic cell comprises: obtaining a layered photovoltaic device comprising: a metal substrate with a crystal orientation; a crystal semiconductor layer with the crystal orientation; and a heteroepitaxially grown buffer layer positioned between the substrate and the crystal semiconductor layer; and forming one or more conductive pathways between the crystal semiconductor layer and the metal substrate, the pathways being through at least a portion of the buffer layer.

摘要翻译： 提供了用于光电池的用于金属的薄膜硅背面接触的系统和方法。 在一个实施例中，用于在光伏电池中产生导电通路的方法包括：获得层状光伏器件，其包括：具有晶体取向的金属衬底; 具有晶体取向的晶体半导体层; 以及位于所述基板和所述晶体半导体层之间的异质外延生长缓冲层; 以及在所述晶体半导体层和所述金属衬底之间形成一个或多个导电路径，所述路径通过所述缓冲层的至少一部分。