公开(公告)号：US20250040448A1

公开(公告)日：2025-01-30

申请号：US18442149

申请日：2024-02-15

Applicant: Ambature, Inc.

Inventor： Archana Tiwari ,  Mitchell Robson ,  Priyanka Brojabasi

IPC: H10N60/01 ,  H10N60/12 ,  H10N60/80

Abstract: In some implementations of the invention, a silicon dioxide (SiO2) insulating layer added between islands of a top YBCO layer of a Josephson Junction isolates a contact layer from YBCO (or other conductive components) in the Josephson Junction. In some implementations of the invention, a SiO2 insulating layer added between islands of a bottom YBCO layer of adjacent Josephson Junctions isolates the contact layer or other components from YBCO (or other conductive components) in the Josephson Junction. In some implementations of the invention, an etch stop layer may be deposited over the islands of the top YBCO layer prior to adding the SiO2 insulating layer. This etch stop layer protects the top YBCO layer during the adding of the SiO2 insulating layer and during subsequent formation of a via through the SiO2 to the etch stop layer.