公开(公告)号：US5039578A

公开(公告)日：1991-08-13

申请号：US484452

申请日：1990-02-20

Applicant: Amiram Appelbaum ,  Murray Robbins

Inventor： Amiram Appelbaum ,  Murray Robbins

IPC: H01L21/285 ,  H01L29/45

CPC classification number: H01L29/452 ,  H01L21/28575 ,  Y10S428/901 ,  Y10S428/929

Abstract: A new technique for forming non-rectifying electrical contacts to III-V semiconductor materials, without the use of dopants or of an alloying procedure, is disclosed. In accordance with this technique, an electrical contact is formed simply by depositing a region of material (onto the semiconductor material) having a composition which includes at least one metal element and at least one of three specific Group V elements, i.e., P, As, or Sb, and having a bulk electrical resistivity equal to or less than about 250 .mu..OMEGA.-cm. Alternatively, a contact is formed by depositing nickel, or a nickel-containing material essentially free of gold and silver, and having a composition which does not include any of the three Group V elements. The nickel, or nickel-containing material, is then reacted with the substrate to form a compound having a composition which includes nickel as well as one of the three Group V elements.

Abstract translation: 公开了一种用于对III-V族半导体材料形成非整流电接触而不使用掺杂剂或合金化方法的新技术。 根据该技术，通过沉积具有包含至少一种金属元素和三种特定V族元素中的至少一种的组成的材料区域（即，半导体材料）即简单地形成电接触，即P，As 或Sb，并且具有等于或小于约250μmOMEGA-cm的体电阻率。 或者，通过沉积镍或基本上不含金和银的含镍材料形成接触，并且具有不包括三种V族元素中的任何一种的组合物。 然后将镍或含镍材料与基材反应，以形成具有包括镍以及三种V族元素之一的组成的化合物。