Method for fabricating devices in III-V semiconductor substrates and
devices formed thereby
    1.
    发明授权
    Method for fabricating devices in III-V semiconductor substrates and devices formed thereby 失效
    用于在III-V半导体衬底中制造器件的方法和由此形成的器件

    公开(公告)号:US5039578A

    公开(公告)日:1991-08-13

    申请号:US484452

    申请日:1990-02-20

    CPC classification number: H01L29/452 H01L21/28575 Y10S428/901 Y10S428/929

    Abstract: A new technique for forming non-rectifying electrical contacts to III-V semiconductor materials, without the use of dopants or of an alloying procedure, is disclosed. In accordance with this technique, an electrical contact is formed simply by depositing a region of material (onto the semiconductor material) having a composition which includes at least one metal element and at least one of three specific Group V elements, i.e., P, As, or Sb, and having a bulk electrical resistivity equal to or less than about 250 .mu..OMEGA.-cm. Alternatively, a contact is formed by depositing nickel, or a nickel-containing material essentially free of gold and silver, and having a composition which does not include any of the three Group V elements. The nickel, or nickel-containing material, is then reacted with the substrate to form a compound having a composition which includes nickel as well as one of the three Group V elements.

    Abstract translation: 公开了一种用于对III-V族半导体材料形成非整流电接触而不使用掺杂剂或合金化方法的新技术。 根据该技术,通过沉积具有包含至少一种金属元素和三种特定V族元素中的至少一种的组成的材料区域(即,半导体材料)即简单地形成电接触,即P,As 或Sb,并且具有等于或小于约250μmOMEGA-cm的体电阻率。 或者,通过沉积镍或基本上不含金和银的含镍材料形成接触,并且具有不包括三种V族元素中的任何一种的组合物。 然后将镍或含镍材料与基材反应,以形成具有包括镍以及三种V族元素之一的组成的化合物。

    Method of making non-precious metal electrical contacts by electroplating
    2.
    发明授权
    Method of making non-precious metal electrical contacts by electroplating 失效
    通过电镀制造非贵重金属电触点的方法

    公开(公告)号:US4518469A

    公开(公告)日:1985-05-21

    申请号:US646665

    申请日:1984-08-31

    CPC classification number: H01H11/041 C25D3/56 C25D3/562 H01H2011/046

    Abstract: A method for electroplating a nickel-antimony alloy comprising from 1-70 weight percent antimony and the balance nickel comprises electroplating the alloy from a solution containing a soluble nickel salt and a soluble mixed antimony alkali metal salt of a polybasic organic acid at a pH in the range of about from 1 to 6. The substrate to be plated is made the cathode and an inert anode is employed.

    Abstract translation: 用于电镀镍锑合金的方法包括1-70重量%的锑和余量的镍包括从含有可溶性镍盐和多碱有机酸的可溶性混合锑碱金属盐的溶液中电镀该合金,pH为 约1至6的范围。将要镀覆的基底制成阴极,并使用惰性阳极。

    Negative temperature coefficient thermistors
    4.
    发明授权
    Negative temperature coefficient thermistors 失效
    负温度系数热敏电阻

    公开(公告)号:US4531110A

    公开(公告)日:1985-07-23

    申请号:US301721

    申请日:1981-09-14

    CPC classification number: H01C7/046 Y10T29/49085

    Abstract: Inexpensive Mn or Mg ferrites may be used as negative temperature coefficient thermistors. Fabrication of devices with the desired high temperature coefficients is facilitated by a processing method which forms a thin layer of oxidized and high resistivity material on a low resistivity layer of ferrite material.

    Abstract translation: 廉价的Mn或Mg铁氧体可用作负温度系数热敏电阻。 通过在铁氧体材料的低电阻率层上形成氧化和高电阻率材料的薄层的处理方法来促进具有期望的高温度系数的器件的制造。

    Preparation of III-V materials by reduction
    5.
    发明授权
    Preparation of III-V materials by reduction 失效
    通过还原制备III-V材料

    公开(公告)号:US4399097A

    公开(公告)日:1983-08-16

    申请号:US288000

    申请日:1981-07-29

    CPC classification number: C22C1/007

    Abstract: A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an overpressure of the more volatile element or elements during reduction.

    Abstract translation: 示出了通过在氢气氛中还原络盐来生产III-V材料的方法。 例如,复合盐可以还原成InP或GaAs。 盐通过盐溶液共沉淀或其它方法方便地制备。 可以通过在还原期间施加更易挥发的元素的过压来改变化学计量。

    Magnetic devices by selective reduction of oxides
    6.
    发明授权
    Magnetic devices by selective reduction of oxides 失效
    通过选择性还原氧化物的磁性器件

    公开(公告)号:US4379003A

    公开(公告)日:1983-04-05

    申请号:US173641

    申请日:1980-07-30

    CPC classification number: H01F1/14741 B22F3/001

    Abstract: Magnetic material is made by reducing an oxide powder compact having at least one nonreducible oxide species. A typical mixture of nickel, iron, and aluminum oxides selectively reduces to form a material having a typical permeability of 10 or more and high resistivity. Reduced eddy current losses occur in devices made from such material.

    Abstract translation: 磁性材料通过还原具有至少一种不可还原氧化物的氧化物粉末压块制成。 选择性地减少镍,铁和铝氧化物的典型混合物以形成具有10以上的典型渗透性和高电阻率的材料。 在由这种材料制成的器件中会发生减小的涡流损耗。

    Production of single phase alloy parts by reduction of oxides
    8.
    发明授权
    Production of single phase alloy parts by reduction of oxides 失效
    通过还原氧化物生产单相合金零件

    公开(公告)号:US4236924A

    公开(公告)日:1980-12-02

    申请号:US2988

    申请日:1979-01-12

    CPC classification number: B22F3/001

    Abstract: In the process of producing metal alloy parts by the reduction of powder metal oxide compacts, it has been discovered that single phase alloy parts may be produced by an agglomerated mixture of metal oxides without a separate annealing step. The metal oxide mixture is formed into agglomerates by spray drying a solution of metal salts which are subsequently decomposed, or other techniques, compacted to the desired shape, and then reduced in a hydrogen atmosphere at high temperature. In the case of alloys that would otherwise segregate, a quenching step follows the reduction of the metal oxide shape. As only oxides are involved prior to reduction, problems with surface oxidation are avoided. A sintering step in air can be used to give the oxide compact structural integrity before reduction.

    Abstract translation: 在通过粉末金属氧化物压块的还原制造金属合金部件的过程中,已经发现单相合金部件可以通过金属氧化物的聚集混合物而不用单独的退火步骤来生产。 金属氧化物混合物通过喷雾干燥后续分解的金属盐溶液或其它技术压制成所需形状,然后在高温下在氢气气氛中还原,形成附聚物。 在否则会分离的合金的情况下,淬火步骤遵循金属氧化物形状的减少。 由于在还原之前仅涉及氧化物,所以避免了表面氧化的问题。 空气中的烧结步骤可以用于在还原前赋予氧化物紧密的结构完整性。

    Liquid-semiconductor photocell using sintered electrode
    9.
    发明授权
    Liquid-semiconductor photocell using sintered electrode 失效
    液晶半导体光电池使用烧结电极

    公开(公告)号:US4084044A

    公开(公告)日:1978-04-11

    申请号:US769949

    申请日:1977-02-18

    CPC classification number: H01G9/20 H01M14/005 Y02E10/542 Y10T29/49108

    Abstract: Liquid-semiconductor photocells have received attention recently for use in solar power devices. Alternatives to single crystal semiconductors have been sought to reduce the cost of the photocells. According to this invention, the semiconductor is made from a pressure sintered and vapor annealed semiconductor. The electrode is relatively inexpensive to make and the efficiency of the solar cell compares favorably to the efficiency of solar cells using single crystal electrodes.

    Abstract translation: 近来,液体半导体光电池已经受到关注,用于太阳能发电装置。 已经寻求单晶半导体的替代方案来降低光电池的成本。 根据本发明,半导体由压力烧结和蒸气退火的半导体制成。 电极制造成本相对便宜,并且太阳能电池的效率与使用单晶电极的太阳能电池的效率相比是有利的。

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