Negative temperature coefficient thermistors
    1.
    发明授权
    Negative temperature coefficient thermistors 失效
    负温度系数热敏电阻

    公开(公告)号:US4531110A

    公开(公告)日:1985-07-23

    申请号:US301721

    申请日:1981-09-14

    CPC classification number: H01C7/046 Y10T29/49085

    Abstract: Inexpensive Mn or Mg ferrites may be used as negative temperature coefficient thermistors. Fabrication of devices with the desired high temperature coefficients is facilitated by a processing method which forms a thin layer of oxidized and high resistivity material on a low resistivity layer of ferrite material.

    Abstract translation: 廉价的Mn或Mg铁氧体可用作负温度系数热敏电阻。 通过在铁氧体材料的低电阻率层上形成氧化和高电阻率材料的薄层的处理方法来促进具有期望的高温度系数的器件的制造。

    Preparation of III-V materials by reduction
    2.
    发明授权
    Preparation of III-V materials by reduction 失效
    通过还原制备III-V材料

    公开(公告)号:US4399097A

    公开(公告)日:1983-08-16

    申请号:US288000

    申请日:1981-07-29

    CPC classification number: C22C1/007

    Abstract: A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an overpressure of the more volatile element or elements during reduction.

    Abstract translation: 示出了通过在氢气氛中还原络盐来生产III-V材料的方法。 例如,复合盐可以还原成InP或GaAs。 盐通过盐溶液共沉淀或其它方法方便地制备。 可以通过在还原期间施加更易挥发的元素的过压来改变化学计量。

    Magnetic devices by selective reduction of oxides
    3.
    发明授权
    Magnetic devices by selective reduction of oxides 失效
    通过选择性还原氧化物的磁性器件

    公开(公告)号:US4379003A

    公开(公告)日:1983-04-05

    申请号:US173641

    申请日:1980-07-30

    CPC classification number: H01F1/14741 B22F3/001

    Abstract: Magnetic material is made by reducing an oxide powder compact having at least one nonreducible oxide species. A typical mixture of nickel, iron, and aluminum oxides selectively reduces to form a material having a typical permeability of 10 or more and high resistivity. Reduced eddy current losses occur in devices made from such material.

    Abstract translation: 磁性材料通过还原具有至少一种不可还原氧化物的氧化物粉末压块制成。 选择性地减少镍,铁和铝氧化物的典型混合物以形成具有10以上的典型渗透性和高电阻率的材料。 在由这种材料制成的器件中会发生减小的涡流损耗。

    Method of making non-precious metal electrical contacts by electroplating
    4.
    发明授权
    Method of making non-precious metal electrical contacts by electroplating 失效
    通过电镀制造非贵重金属电触点的方法

    公开(公告)号:US4518469A

    公开(公告)日:1985-05-21

    申请号:US646665

    申请日:1984-08-31

    CPC classification number: H01H11/041 C25D3/56 C25D3/562 H01H2011/046

    Abstract: A method for electroplating a nickel-antimony alloy comprising from 1-70 weight percent antimony and the balance nickel comprises electroplating the alloy from a solution containing a soluble nickel salt and a soluble mixed antimony alkali metal salt of a polybasic organic acid at a pH in the range of about from 1 to 6. The substrate to be plated is made the cathode and an inert anode is employed.

    Abstract translation: 用于电镀镍锑合金的方法包括1-70重量%的锑和余量的镍包括从含有可溶性镍盐和多碱有机酸的可溶性混合锑碱金属盐的溶液中电镀该合金,pH为 约1至6的范围。将要镀覆的基底制成阴极,并使用惰性阳极。

    Method for fabricating devices in III-V semiconductor substrates and
devices formed thereby
    6.
    发明授权
    Method for fabricating devices in III-V semiconductor substrates and devices formed thereby 失效
    用于在III-V半导体衬底中制造器件的方法和由此形成的器件

    公开(公告)号:US5039578A

    公开(公告)日:1991-08-13

    申请号:US484452

    申请日:1990-02-20

    CPC classification number: H01L29/452 H01L21/28575 Y10S428/901 Y10S428/929

    Abstract: A new technique for forming non-rectifying electrical contacts to III-V semiconductor materials, without the use of dopants or of an alloying procedure, is disclosed. In accordance with this technique, an electrical contact is formed simply by depositing a region of material (onto the semiconductor material) having a composition which includes at least one metal element and at least one of three specific Group V elements, i.e., P, As, or Sb, and having a bulk electrical resistivity equal to or less than about 250 .mu..OMEGA.-cm. Alternatively, a contact is formed by depositing nickel, or a nickel-containing material essentially free of gold and silver, and having a composition which does not include any of the three Group V elements. The nickel, or nickel-containing material, is then reacted with the substrate to form a compound having a composition which includes nickel as well as one of the three Group V elements.

    Abstract translation: 公开了一种用于对III-V族半导体材料形成非整流电接触而不使用掺杂剂或合金化方法的新技术。 根据该技术,通过沉积具有包含至少一种金属元素和三种特定V族元素中的至少一种的组成的材料区域(即,半导体材料)即简单地形成电接触,即P,As 或Sb,并且具有等于或小于约250μmOMEGA-cm的体电阻率。 或者,通过沉积镍或基本上不含金和银的含镍材料形成接触,并且具有不包括三种V族元素中的任何一种的组合物。 然后将镍或含镍材料与基材反应,以形成具有包括镍以及三种V族元素之一的组成的化合物。

    Manufacture of high-strength metallic articles
    8.
    发明授权
    Manufacture of high-strength metallic articles 失效
    高强度金属制品的制造

    公开(公告)号:US4304600A

    公开(公告)日:1981-12-08

    申请号:US90416

    申请日:1979-11-01

    Abstract: In the interest of mechanical strength and hardness, metallic bodies desirably contain dispersed particles whose diameter preferably is in the range of 50-10,000 Angstrom. A disclosed method for producing such metallic bodies calls for preparing a solution of mixed salts of elements, removing the solvent, transforming to metallic form, and compacting under pressure. Strength of a resulting metallic body may be further developed by aging and, optionally, cold deformation prior to aging.Use of the disclosed method is indicated especially to produce bodies comprising immiscible elements. For example, when Mo is dispersed in Cu, high strength and electrical conductivity are realized.

    Abstract translation: 为了机械强度和硬度,金属体希望含有直径优选为50〜10,000埃的分散粒子。 所公开的制造这种金属体的方法要求制备元素混合盐溶液,去除溶剂,转化为金属形式,并在压力下压实。 所得到的金属体的强度可以通过老化和任选地在老化之前的冷变形进一步发展。 特别地使用所公开的方法来产生包含不混溶元素的物体。 例如,当Mo分散在Cu中时,实现高强度和导电性。

    Nickel-based electrical contact
    10.
    发明授权
    Nickel-based electrical contact 失效
    镍基电接触

    公开(公告)号:US4925407A

    公开(公告)日:1990-05-15

    申请号:US823987

    申请日:1986-01-30

    CPC classification number: H01H1/021

    Abstract: Contacts comprising nickel and a glass-forming additive have electrical contact properties which render them suitable as replacements for gold contacts; disclosed contacts have low contact resistance even after prolonged exposure to an oxidizing ambient. The glass-forming additive is one or several of the elements boron, silicon, germanium, phosphorus, arsenic, antimony, or bismuth, and contacts are readily formed, e.g., as layers on substrates. A crystallographically disordered structure is produced in a contact surface layer at least upon exposure to an oxidizing ambient; alternatively, such desired structure can be produced by ion bombardment and even in the absence of glass-forming additives.

    Abstract translation: 包含镍和玻璃形成添加剂的触点具有电接触性能,使得它们适合作为金触点的替代; 公开的接触点即使在长时间暴露于氧化环境之后也具有低接触电阻。 玻璃形成添加剂是硼,硅,锗,磷,砷,锑或铋中的一种或几种元素,并且接触容易形成,例如作为基底上的层。 至少在暴露于氧化环境中时,在接触表面层中产生晶体学上无序的结构; 或者,这种所需的结构可以通过离子轰击,甚至在不存在玻璃形成添加剂的情况下制备。

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