公开(公告)号：US07393563B2

公开(公告)日：2008-07-01

申请号：US11394989

申请日：2006-03-30

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： C23C16/14 ,  C23C16/24

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

摘要翻译： 公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段 时间。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

公开(公告)号：US06767823B2

公开(公告)日：2004-07-27

申请号：US10094580

申请日：2002-03-06

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： H01L214763

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide comprising layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide comprising layer on the substrate.

摘要翻译： 公开了在衬底上形成包含层的硅化钛的化学气相沉积方法。 首先将TiCl 4和至少一种硅烷以等于或高于TiCl 4与硅烷的第一体积比率进料到室中。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4和至少一种硅烷以等于或低于第二体积比的TiCl 4与硅烷进料至室中第二时间段。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地增强化学气相沉积在基底上的包含硅化钛的层。

公开(公告)号：US06734051B2

公开(公告)日：2004-05-11

申请号：US10341750

申请日：2003-01-13

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： H01L2184

CPC分类号： C23C16/4407 ,  C23C16/14 ,  C23C16/42 ,  C23C16/4404

摘要： A first cleaning is conducted on a plasma enhanced chemical vapor deposition chamber at room ambient pressure. After the first cleaning, elemental titanium comprising layers are chemical vapor deposited on a first plurality of substrates within the chamber using at least TiCl4. Thereafter, titanium silicide comprising layers are plasma enhanced chemical vapor deposited on a second plurality of substrates within the chamber using at least TiCl4 and a silane. Thereafter, a second cleaning is conducted on the chamber at ambient room pressure. In one implementation after the first cleaning, an elemental titanium comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber. In another implementation, a titanium silicide comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber.

摘要翻译： 在室内环境压力下，在等离子体增强化学气相沉积室上进行第一次清洗。 在第一次清洁之后，使用至少TiCl 4，在室内的第一组多个衬底上化学气相沉积包含层的元素钛。 此后，包含层的硅化钛是使用至少TiCl 4和硅烷沉积在室内的第二多个基板上的等离子体增强化学气相。 此后，在室内在室内进行第二清洗。 在第一次清洁之后的一个实施方案中，元素钛包含层在室的内表面上化学气相沉积，而在室内没有接收半导体衬底。 在另一个实施方案中，包含硅化钛的层在室的内表面上化学气相沉积，而在腔室内不接收半导体衬底。

公开(公告)号：US07396570B2

公开(公告)日：2008-07-08

申请号：US11394988

申请日：2006-03-30

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： H01L21/4763 ,  H05H1/24

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

公开(公告)号：US06586285B1

公开(公告)日：2003-07-01

申请号：US10094017

申请日：2002-03-06

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： H01L2184

CPC分类号： C23C16/4407 ,  C23C16/14 ,  C23C16/42 ,  C23C16/4404

摘要： A first cleaning is conducted on a plasma enhanced chemical vapor deposition chamber at room ambient pressure. After the first cleaning, elemental titanium comprising layers are chemical vapor deposited on a first plurality of substrates within the chamber using at least TiCl4. Thereafter, titanium silicide comprising layers are plasma enhanced chemical vapor deposited on a second plurality of substrates within the chamber using at least TiCl4 and a silane. Thereafter, a second cleaning is conducted on the chamber at ambient room pressure. In one implementation after the first cleaning, an elemental titanium comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber. In another implementation, a titanium silicide comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber.

摘要翻译： 在室内环境压力下，在等离子体增强化学气相沉积室上进行第一次清洗。 在第一次清洁之后，使用至少TiCl 4，在室内的第一组多个衬底上化学气相沉积包含层的元素钛。 此后，包含层的硅化钛是使用至少TiCl 4和硅烷沉积在室内的第二多个基板上的等离子体增强化学气相。 此后，在室内在室内进行第二清洗。 在第一次清洁之后的一个实施方案中，元素钛包含层在室的内表面上化学气相沉积，而在室内没有接收半导体衬底。 在另一个实施方案中，包含硅化钛的层在室的内表面上化学气相沉积，而在腔室内不接收半导体衬底。

公开(公告)号：US07033642B2

公开(公告)日：2006-04-25

申请号：US10666025

申请日：2003-09-17

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： C23C16/14 ,  C23C16/24

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

摘要翻译： 公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段 时间。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

公开(公告)号：US06730355B2

公开(公告)日：2004-05-04

申请号：US10094579

申请日：2002-03-06

申请人： Ammar Derraa ,  Cem Basceri ,  Irina Vasilyeva ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Ammar Derraa ,  Cem Basceri ,  Irina Vasilyeva ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： C23C1642

CPC分类号： C23C16/4408 ,  C23C16/42 ,  C23C16/4405

摘要： A first substrate is provided within a chemical vapor deposition chamber. A reactive gas mixture comprising TiCl4 and a silane is provided within the chamber effective to first chemically vapor deposit a titanium silicide comprising layer on the first substrate. After the first deposit, the first substrate is removed from the chamber. After the first deposit, a first cleaning is conducted within the chamber with a chlorine comprising gas. After the first cleaning, a second cleaning is conducted within the chamber with a hydrogen comprising gas. After the second cleaning and after the removing, a titanium silicide comprising layer is chemically vapor deposited over a second substrate within the chamber using a reactive gas mixture comprising TiCl4 and a silane. Other implementations are disclosed.

摘要翻译： 第一基板设置在化学气相沉积室内。 在室内提供包含TiCl 4和硅烷的反应气体混合物，其有效地首先在第一衬底上化学气相沉积包含硅化钛的层。 在第一次沉积之后，将第一衬底从腔室中取出。 在第一次沉积之后，在室内用含氯气体进行第一次清洗。 在第一次清洁之后，在室内用含氢气体进行第二次清洗。 在第二次清洁之后并且在除去之后，使用包含TiCl 4和硅烷的反应性气体混合物，在室内的第二衬底上化学气相沉积包含硅化钛的层。 公开了其他实现。

公开(公告)号：US20060172087A1

公开(公告)日：2006-08-03

申请号：US11394988

申请日：2006-03-30

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip Campbell ,  Gurtej Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip Campbell ,  Gurtej Sandhu

IPC分类号： C23C16/14

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

摘要翻译： 公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段 时间。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

公开(公告)号：US20050079697A1

公开(公告)日：2005-04-14

申请号：US10666025

申请日：2003-09-17

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip Campbell ,  Gurtej Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip Campbell ,  Gurtej Sandhu

IPC分类号： C23C16/42 ,  H01L21/285 ,  H01L21/44

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

摘要翻译： 公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 首先将TiCl 4和至少一种硅烷以等于或高于TiCl 4与硅烷的第一体积比在第一时间段内进料至室。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4和至少一种硅烷以等于或低于第二体积比的TiCl 4与硅烷进料至室中第二时间段。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

公开(公告)号：US20060172088A1

公开(公告)日：2006-08-03

申请号：US11394989

申请日：2006-03-30

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip Campbell ,  Gurtej Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip Campbell ,  Gurtej Sandhu

IPC分类号： C23C16/14

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.