Package stress sensor
    2.
    发明授权

    公开(公告)号:US12259285B2

    公开(公告)日:2025-03-25

    申请号:US17816979

    申请日:2022-08-02

    Abstract: A semiconductor-based stress sensor can include a bipolar transistor device with first and second collector terminals. An excitation circuit can provide an excitation signal to an emitter terminal of the bipolar transistor device, and a physical stress indicator for the semiconductor can be provided based on a relationship between signals measured at the collector terminals in response to the excitation signal. The signals can indicate a charge carrier mobility characteristic of the semiconductor, which can be used to provide an indication of physical stress. In an example, the physical stress indicator is based on a current deflection characteristic of a base region of the transistor device.

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