公开(公告)号：US20130300487A1

公开(公告)日：2013-11-14

申请号：US13945701

申请日：2013-07-18

Applicant: Analog Devices, Inc.

Inventor： Jeffrey G. Barrow ,  Javier A. Salcedo ,  A. Paul Brokaw

IPC: H01L29/745

CPC classification number: H01L29/745 ,  H01L29/7408 ,  H01L29/7455

Abstract: A semiconductor switch comprises a PNPN structure arranged to provide an SCR-like functionality, and a MOS gate structure, preferably integrated on a common substrate. The switch includes ohmic contacts for the MOS gate, and for the cathode and gate regions of the PNPN structure; the anode contact is intrinsic. A fixed voltage is typically applied to an external node. The MOS gate structure allows current to be conducted between the external node and the intrinsic anode when on, and the PNPN structure conducts the current from the anode to the cathode when an appropriate voltage is applied to the gate contact. Regenerative feedback keeps the switch on once it begins to conduct. The MOS gate inhibits the flow of current between the external node and anode—and thereby turns off the switch—when off. When on, the MOS gate's channel resistance serves as a ballast resistor.

Abstract translation: 半导体开关包括被布置为提供类SCR功能的PNPN结构，以及优选地集成在公共基板上的MOS栅极结构。 该开关包括用于MOS栅极的欧姆接触，以及用于PNPN结构的阴极和栅极区域; 阳极接触是固有的。 固定电压通常被施加到外部节点。 MOS栅极结构允许在导通时在外部节点和本征阳极之间传导电流，并且当适当的电压施加到栅极触点时，PNPN结构将电流从阳极传导到阴极。 再生反馈一旦开始进行就保持开关状态。 MOS门禁止外部节点和阳极之间的电流流动，从而在关闭时关闭开关。 当导通时，MOS栅极的沟道电阻用作镇流电阻。