公开(公告)号：US20130023082A1

公开(公告)日：2013-01-24

申请号：US13623633

申请日：2012-09-20

Applicant: Analog Devices, Inc.

Inventor： John R. Martin ,  Timothy J. Frey ,  Christine H. Tsau ,  Michael W. Judy

IPC: H01L21/762 ,  H01L21/50

CPC classification number: H01L23/10 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  H01L24/94 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method of forming a MEMS device provides first and second wafers, where at least one of the first and second wafers has a two-dimensional array of MEMS devices. The method deposits a layer of first germanium onto the first wafer, and a layer of aluminum-germanium alloy onto the second wafer. To deposit the alloy, the method deposits a layer of aluminum onto the second wafer and then a layer of second germanium to the second wafer. Specifically, the layer of second germanium is deposited on the layer of aluminum. Next, the method brings the first wafer into contact with the second wafer so that the first germanium in the aluminum-germanium alloy contacts the second germanium. The wafers then are heated when the first and second germanium are in contact, and cooled to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices.

Abstract translation: 形成MEMS器件的方法提供第一和第二晶片，其中第一和第二晶片中的至少一个具有MEMS器件的二维阵列。 该方法将第一锗的一层沉积到第一晶片上，并将一层铝 - 锗合金沉积到第二晶片上。 为了沉积合金，该方法将一层铝沉积到第二晶片上，然后将第二锗层沉积到第二晶片。 具体地，第二锗层沉积在铝层上。 接下来，该方法使第一晶片与第二晶片接触，使得铝 - 锗合金中的第一锗与第二锗接触。 然后当第一和第二锗接触时，晶片被加热，并且被冷却以围绕多个MEMS器件形成多个导电密封环。

公开(公告)号：US08956904B2

公开(公告)日：2015-02-17

申请号：US13623633

申请日：2012-09-20

Applicant: Analog Devices, Inc.

Inventor： John R. Martin ,  Timothy J. Frey ,  Christine H. Tsau ,  Michael W. Judy

IPC: H01L21/762 ,  H01L21/50 ,  H01L23/10 ,  B81C1/00 ,  H01L23/00

CPC classification number: H01L23/10 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  H01L24/94 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method of forming a MEMS device provides first and second wafers, where at least one of the first and second wafers has a two-dimensional array of MEMS devices. The method deposits a layer of first germanium onto the first wafer, and a layer of aluminum-germanium alloy onto the second wafer. To deposit the alloy, the method deposits a layer of aluminum onto the second wafer and then a layer of second germanium to the second wafer. Specifically, the layer of second germanium is deposited on the layer of aluminum. Next, the method brings the first wafer into contact with the second wafer so that the first germanium in the aluminum-germanium alloy contacts the second germanium. The wafers then are heated when the first and second germanium are in contact, and cooled to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices.

Abstract translation: 形成MEMS器件的方法提供第一和第二晶片，其中第一和第二晶片中的至少一个具有MEMS器件的二维阵列。 该方法将第一锗的一层沉积到第一晶片上，并将一层铝 - 锗合金沉积到第二晶片上。 为了沉积合金，该方法将一层铝沉积到第二晶片上，然后将第二锗层沉积到第二晶片。 具体地，第二锗层沉积在铝层上。 接下来，该方法使第一晶片与第二晶片接触，使得铝 - 锗合金中的第一锗与第二锗接触。 然后当第一和第二锗接触时，晶片被加热，并且被冷却以围绕多个MEMS器件形成多个导电密封环。