Transistor gate driver
    1.
    发明授权

    公开(公告)号:US10425077B1

    公开(公告)日:2019-09-24

    申请号:US16001501

    申请日:2018-06-06

    Abstract: The present disclosure relates to a gate driver system suitable for driving the gate voltage of one or more transistors. The gate driver system is configured to operate in a first state when the current conducted by the transistor is relatively low and in a second state when the current conducted by the transistor is relatively high. In the second state, the gate voltage is set such that the source voltage at the transistor establishes a lower voltage across a source-driven load than is the case when operating the first state, thereby reducing the level of power consumption in the load during second state operation.

Patent Agency Ranking