High velocity method for deposing diamond films from a gaseous phase in shf discharge plasma and device for carrying out said method
    1.
    发明申请
    High velocity method for deposing diamond films from a gaseous phase in shf discharge plasma and device for carrying out said method 失效
    用于在shf放电等离子体中从气相沉积金刚石膜的高速方法和用于执行所述方法的装置

    公开(公告)号:US20060110546A1

    公开(公告)日:2006-05-25

    申请号:US10526800

    申请日:2003-09-18

    IPC分类号: H05H1/46 C23C16/00

    摘要: The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma and can be used, for example, for producing polycrystalline diamond films (plates), which are used for producing output windows of power SHF sources, for example gyrotrons. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle □ equal to or less than 3×10−5 on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber and contains at least hydrogen and hydrocarbon. Afterwards, said gas mixture is activated by producing a stable nonequilibrium plasma with the aid of SHF radiation having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz. In order to localize the plasma, a standing wave is formed near the carrier and plasma layers are formed in the antinodes thereof in such a way that the sizes thereof are adjustable.

    摘要翻译: 本发明涉及通过在SHF放电等离子体的帮助下分解气态化合物的碳沉积,并且可以用于制备用于产生功率SHF源的输出​​窗口的多晶金刚石膜(板),例如陀螺仪 。 本发明确保高品质金刚石薄膜的高速沉积(在直径等于或高于100mm的载体上具有等于或小于3×10 -5的损耗切线角度) 这个目的是在配置在反应室中并至少包含氢和烃的气体混合物中引发SHF放电,然后借助于具有频率f的SHF辐射产生稳定的非平衡等离子体来激活所述气体混合物 比常用的2.45GHz的频率(例如30GHz)高出许多倍,为了使等离子体定位,在载体附近形成驻波,在其波腹中形成等离子体层,使得其尺寸 可调节。