High performance single port RAM generator architecture
    1.
    发明授权
    High performance single port RAM generator architecture 失效
    高性能单端口RAM发生器架构

    公开(公告)号:US5471428A

    公开(公告)日:1995-11-28

    申请号:US159181

    申请日:1993-11-30

    CPC分类号: G11C7/22 G11C7/14

    摘要: A single-port RAM generator architecture, for the generation of different RAM structures in a CAD environment, and to test the operation capabilities of the different RAM structure. The architecture includes a Static RAM matrix and a self timed architecture, which includes a control logic, both a dummy row and a dummy column having respectively equivalent load of a word line and of bit column of said matrix. The dummy column is discharged at a faster rate than the corresponding bit column optimizing the timing and reducing power consumption. Different column multiplexer selections provide different RAMs for a selected RAM size, each having slightly different silicon area and timing performance.

    摘要翻译: 单端口RAM生成器架构,用于在CAD环境中生成不同的RAM结构,并测试不同RAM结构的操作能力。 该架构包括静态RAM矩阵和自定时架构,其包括控制逻辑,虚拟行和虚拟列,分别具有字线和所述矩阵的位列的等效负载。 虚拟列以比相应位列更快的速率放电,优化定时并降低功耗。 不同的列复用器选择为选定的RAM大小提供不同的RAM,每个RAM具有略微不同的硅面积和时序性能。

    High performance single port RAM generator architecture
    2.
    发明授权
    High performance single port RAM generator architecture 失效
    高性能单端口RAM发生器架构

    公开(公告)号:US5703821A

    公开(公告)日:1997-12-30

    申请号:US562736

    申请日:1995-11-27

    CPC分类号: G11C7/22 G11C7/14

    摘要: A single-port RAM generator architecture, for the generation of different RAM structures in a CAD environment, and to test the operation capabilities of the different RAM structure, The architecture includes a Static RAM matrix and a self timed architecture, which includes a control logic, both a dummy row and a dummy column having respectively equivalent load of a word line and of bit column of said matrix. The dummy column is discharged at a faster rate than the corresponding bit column optimizing the timing and reducing power consumption. Different column multiplexer selections provide different RAMs for a selected RAM size, each having slightly different silicon area and timing performance.

    摘要翻译: 单端口RAM生成器架构,用于在CAD环境中生成不同的RAM结构,并测试不同RAM结构的操作能力。该架构包括一个静态RAM矩阵和一个自定时架构,其中包括一个控制逻辑 ,具有分别具有所述矩阵的字线和位列的等效负载的虚拟行和虚拟列。 虚拟列以比相应位列更快的速率放电,优化定时并降低功耗。 不同的列复用器选择为选定的RAM大小提供不同的RAM,每个RAM具有略微不同的硅面积和时序性能。