Four-wave-mixing based optical wavelength converter device
    1.
    发明申请
    Four-wave-mixing based optical wavelength converter device 有权
    基于四波混频的光波长转换器

    公开(公告)号:US20060092500A1

    公开(公告)日:2006-05-04

    申请号:US10518855

    申请日:2002-06-28

    IPC分类号: G02F2/02

    摘要: Wavelength converter device for generating a converted radiation at frequency Ωg through interaction between at least one signal radiation at frequency Ωg and at least one pump radiation at frequency Ωg, with an input for the at least one signal radiation at frequency Ωg; a pump light source for generating the at least one pump radiation at frequency Ωg, an output for taking out the converted radiation at frequency Ωg, a structure for transmitting the signal radiation, the structure including one optical resonator having a non-linear material, having an optical length of at least 40*η/2, wavelength η being the wavelength of the pump radiation, and resonating at the pump, signal and converted frequencies Ωp, Ωs, and Ωg. The structure has a further optical resonator coupled in series to the optical resonator, the further optical resonator having a non-linear material, having an optical length of at least 40*η/2, wherein η is the wavelength of the pump radiation, and resonating at the pump, signal and converted Ωp, Ωs and Ωg, wherein by propagating through the structure, the pump and signal radiation generate the converted radiation by non-linear interaction within the optical resonators.

    摘要翻译: 波长转换器装置,用于通过至少一个频率ω1的信号辐射与至少一个频率ωω的泵浦辐射之间的相互作用产生频率为ωm的转换的辐射, 具有用于频率为ωm的至少一个信号辐射的输入; 泵浦光源,用于产生频率为Ωm的至少一个泵浦辐射,用于以频率ω1取出转换的辐射的输出,用于传输信号的结构 辐射,该结构包括具有非线性材料的一个光学谐振器,其光学长度至少为40 *η/ 2,波长eta是泵浦辐射的波长,并且在泵谐振,信号和转换频率ω 。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。 该结构具有与光学谐振器串联耦合的另外的光学谐振器,该另一个光学谐振器具有非线性材料,其光学长度至少为40 *η/ 2,其中eta是泵浦辐射的波长,以及 在泵上谐振,信号和转换的欧米茄,欧米茄和欧米茄,其中通过传播通过该结构的泵和信号辐射 在光学谐振器内通过非线性相互作用产生转换的辐射。

    Electro-optic semiconductor modulators
    3.
    发明申请
    Electro-optic semiconductor modulators 失效
    电光半导体调制器

    公开(公告)号:US20050083566A1

    公开(公告)日:2005-04-21

    申请号:US10498868

    申请日:2001-12-18

    IPC分类号: G02F1/03 G02F1/00

    CPC分类号: G02F1/0305

    摘要: An electro-optic (EO) device having a high-resistivity semiconducting crystal and a method of operating such a device. The local shielding of the externally applied field lowers the EO effect, which can be partially or completely inhibited particularly in the low-frequency regime, i.e., less than about 105 Hz. By holding a high-resistivity semiconducting crystal at a suitable temperature, EO response and efficiency are improved, in particular for light signals that are non-modulated or modulated at low frequencies. Preferably, the temperature at which the semiconducting crystal is held during functioning is between 50 and 150° C. Enhancement of the EO effect has been demonstrated also for EO devices operating at relatively large optical powers, i.e., larger than about 0.1 mW.

    摘要翻译: 具有高电阻率半导体晶体的电光(EO)器件和操作这种器件的方法。 外部施加的场的局部屏蔽降低了EO效应,这可以部分地或完全地被抑制,特别是在低频状态下,即小于约10Hz。 通过在合适的温度下保持高电阻率半导体晶体,EO响应和效率得到改善,特别是对于在低频下未调制或调制的光信号。 优选地,半导体晶体在功能期间保持的温度为50-150℃。对于在相对大的光焦度(即大于约0.1mW)下操作的EO器件也已经证明了EO效应的增强。