-
公开(公告)号:US6114256A
公开(公告)日:2000-09-05
申请号:US516494
申请日:1995-08-18
IPC分类号: H01L21/48 , H01L21/768 , H01L23/373 , H01L23/498 , H01L21/31
CPC分类号: H01L23/498 , H01L21/4846 , H01L21/76841 , H01L23/3732 , H01L2924/0002
摘要: An adherent and metallurgically stable metallization system for diamond is presented. The big improvement in metallurgical stability is attributed to the use of a ternary, amorphous Ti--Si--N diffusion barrier. No diffusion between the layers and no delamination of the metallization was observed after annealing the schemes at 400.degree. C. for 100 hours and at 900.degree. C. for 30 minutes. Thermal cycling experiments in air from -65 to 155.degree. C. and adhesion tests were performed. Various embodiments are disclosed.
摘要翻译: 提出了一种用于金刚石的粘附和冶金稳定的金属化系统。 冶金稳定性的巨大改善归因于使用三元非晶Ti-Si-N扩散屏障。 在400℃退火100小时后,在900℃退火30分钟后,层间没有观察到扩散,没有发生金属化分层。 进行空气中-65至155℃的热循环实验和粘附试验。 公开了各种实施例。