Quartz Glass Component For A Uv Radiation Source And Method For Producing And Testing The Aptitude Of Such A Quartz Glass Component
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    发明申请
    Quartz Glass Component For A Uv Radiation Source And Method For Producing And Testing The Aptitude Of Such A Quartz Glass Component 审中-公开
    用于Uv辐射源的石英玻璃组件和用于生产和测试这种石英玻璃组分的能力的方法

    公开(公告)号:US20070272685A1

    公开(公告)日:2007-11-29

    申请号:US11578393

    申请日:2005-04-05

    IPC分类号: H01J61/38

    摘要: In a known method, a quartz glass component is produced for a UV radiation source by melting SiO2-containing grain. Starting therefrom, to indicate an inexpensive method by means of which a quartz glass component is obtained that is characterized by high radiation resistance, it is suggested according to the invention that synthetically produced quartz crystals are molten to obtain a pre-product which consists of quartz glass containing hydroxyl groups in a number greater than the number of SiH groups, and that for the elimination of SiH groups the pre-product is subjected to an annealing treatment at a temperature of at least 850° C., whereby the quartz glass component is obtained. In the quartz glass component of the invention, the quartz glass is molten from synthetically produced quartz crystals, and it has a content of SiH groups of less than 5×1017 molecules/cm3.

    摘要翻译: 在已知的方法中,通过熔化含SiO 2的晶粒来生产用于UV辐射源的石英玻璃组分。 从其开始,为了表明一种廉价的方法,通过该方法获得了以高耐辐射性为特征的石英玻璃组分,根据本发明提出,将合成的石英晶体熔融以获得由石英组成的预制品 含有数量大于SiH基数的羟基的玻璃,并且为了除去SiH基,将前产物在至少850℃的温度下进行退火处理,由此石英玻璃成分为 获得。 在本发明的石英玻璃组分中,石英玻璃从合成产生的石英晶体熔化,并且其SiH基含量小于5×10 17分子/ cm 3 / >。