公开(公告)号：US20070215978A1

公开(公告)日：2007-09-20

申请号：US11568156

申请日：2004-04-22

申请人： Andreas Stricker ,  David Sheridan ,  Jae-Sung Rieh ,  Greg Freeman ,  Steven Voldman ,  Stephen Onge

发明人： Andreas Stricker ,  David Sheridan ,  Jae-Sung Rieh ,  Greg Freeman ,  Steven Voldman ,  Stephen Onge

IPC分类号： H01L29/66

CPC分类号： H01L29/66363 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/66242 ,  H01L29/7378 ,  H01L29/74 ,  H01L29/861 ,  H01L29/872 ,  H01L29/93

摘要： Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate. In addition, this structure includes an active area (collector) above the sub-collector, a base above the active area, and an emitter above the base. The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure. The performance characteristics that are tunable include breakdown voltage, unity current gain cutoff frequency, unity power gain cutoff frequency, transit frequency, current density, capacitance range, noise injection, minority carrier injection and trigger and holding voltage.

摘要翻译： 公开了一种形成半导体结构的方法，该半导体结构包括具有与下面的衬底不同的极性的不连续的非平面子集电极。 此外，该结构包括在副集电极上方的有源区（集电极），有源区上方的基极和基极上方的发射极。 不连续子集电极的不连续部分之间的距离调节了半导体结构的性能特性。 可调谐的性能特点包括击穿电压，单位电流增益截止频率，单位功率增益截止频率，传输频率，电流密度，电容范围，噪声注入，少数载流子注入以及触发和保持电压。

公开(公告)号：US20060081934A1

公开(公告)日：2006-04-20

申请号：US11289915

申请日：2005-11-30

申请人： Marwan Khater ,  James Dunn ,  David Harame ,  Alvin Joseph ,  Qizhi Liu ,  Francois Pagette ,  Stephen Onge ,  Andreas Stricker

发明人： Marwan Khater ,  James Dunn ,  David Harame ,  Alvin Joseph ,  Qizhi Liu ,  Francois Pagette ,  Stephen Onge ,  Andreas Stricker

IPC分类号： H01L23/62

CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： A bipolar transistor with raised extrinsic base and selectable self-alignment between the extrinsic base and the emitter is disclosed. The fabrication method may include the formation of a predefined thickness of a first extrinsic base layer of polysilicon or silicon on an intrinsic base. A dielectric landing pad is then formed by lithography on the first extrinsic base layer. Next, a second extrinsic base layer of polysilicon or silicon is formed on top of the dielectric landing pad to finalize the raised extrinsic base total thickness. An emitter opening is formed using lithography and RIE, where the second extrinsic base layer is etched stopping on the dielectric landing pad. The degree of self-alignment between the emitter and the raised extrinsic base is achieved by selecting the first extrinsic base layer thickness, the dielectric landing pad width, and the spacer width.

摘要翻译： 公开了一种具有凸起的外在基极和在本征基极和发射极之间可选自对准的双极晶体管。 制造方法可以包括在内在基底上形成多晶硅或硅的第一非本征基极层的预定厚度。 然后通过在第一非本征基层上的光刻形成电介质着色焊盘。 接下来，在电介质贴片垫的顶部上形成第二非多晶硅或硅的非本征基极层，以最终确定凸出的非本征基本总厚度。 使用光刻和RIE形成发射器开口，其中第二外部基极层被蚀刻停止在电介质着色焊盘上。 通过选择第一非本征基极层厚度，电介质着陆焊盘宽度和间隔物宽度来实现发射极和凸出的外部基极之间的自对准程度。