公开(公告)号：US10115851B2

公开(公告)日：2018-10-30

申请号：US13879593

申请日：2011-10-14

申请人： Andreas Teppe ,  Adolf Muenzer ,  Jan Schoene ,  Mathias Hein ,  Peter Winter

发明人： Andreas Teppe ,  Adolf Muenzer ,  Jan Schoene ,  Mathias Hein ,  Peter Winter

IPC分类号： H01L31/052 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/056

摘要： Solar cell (11; 21; 31) having a dielectric coating arranged on a back side of the solar cell (11; 21; 31) which is at least partly covered by at least one planar contact (12; 22; 32), a boundary line (14; 24; 34) of the at least one planar contact (12; 22; 32) having at least one recess (16a, 16b; 26a, 26b, 26c), and method for producing same.

公开(公告)号：US20130312823A1

公开(公告)日：2013-11-28

申请号：US13879593

申请日：2011-10-14

申请人： Andreas Teppe ,  Adolf Muenzer ,  Jan Schoene ,  Mathias Hein ,  Peter Winter

发明人： Andreas Teppe ,  Adolf Muenzer ,  Jan Schoene ,  Mathias Hein ,  Peter Winter

IPC分类号： H01L31/052 ,  H01L31/18

CPC分类号： H01L31/056 ,  H01L31/022425 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cell (11; 21; 31) having a dielectric coating arranged on a back side of the solar cell (11; 21; 31) which is at least partly covered by at least one planar contact (12; 22; 32), a boundary line (14; 24; 34) of the at least one planar contact (12; 22; 32) having at least one recess (16a, 16b; 26a, 26b, 26c), and method for producing same.

摘要翻译： 具有布置在太阳能电池（11; 21; 31）的背侧上的电介质涂层的太阳能电池（11; 21; 31），其至少部分被至少一个平面触点（12; 22; 32）覆盖， 所述至少一个平面接触件（12; 22; 32）的边界线（14; 24; 34）具有至少一个凹部（16a，16b; 26a，26b，26c）及其制造方法。

公开(公告)号：US20140051199A1

公开(公告)日：2014-02-20

申请号：US13993757

申请日：2011-12-09

申请人： Adolf Muenzer ,  Andreas Teppe ,  Jan Schoene ,  Mathias Hein ,  Jens Kruemberg ,  Sandra Kruemberg

发明人： Adolf Muenzer ,  Andreas Teppe ,  Jan Schoene ,  Mathias Hein ,  Jens Kruemberg ,  Sandra Kruemberg

IPC分类号： H01L31/0236

CPC分类号： H01L31/0236 ,  H01L31/02363 ,  H01L31/056 ,  Y02E10/52

摘要： Method for producing a silicon solar cell which is smoothly etched on one side, in which a front side and a rear side of a silicon substrate are etched (10) to form a smooth texture, a dielectric coating is then formed (14, 16) on the rear side of the silicon substrate and the front side of the silicon substrate is subsequently textured (20) by means of a texture etching medium, the dielectric coating formed on the rear side of the silicon substrate being used as an etching mask against the texture etching medium.

摘要翻译： 制造在硅衬底的前侧和后侧蚀刻（10）以形成光滑纹理的一侧平滑蚀刻的硅太阳能电池的方法，然后形成电介质涂层（14,16） 在硅衬底的后侧，随后通过纹理蚀刻介质对硅衬底的前侧进行纹理化（20），形成在硅衬底的后侧上的电介质涂层用作抗蚀剂掩模 纹理蚀刻介质。