公开(公告)号：US07173953B2

公开(公告)日：2007-02-06

申请号：US10735375

申请日：2003-12-12

申请人： Andreas Wittmann ,  Martin Gotza ,  Michael Solar ,  Ernst-Eberhard Latta ,  Tim Kellner ,  Martin Krejci

发明人： Andreas Wittmann ,  Martin Gotza ,  Michael Solar ,  Ernst-Eberhard Latta ,  Tim Kellner ,  Martin Krejci

IPC分类号： H01S5/00 ,  H01L33/00

CPC分类号： H01S5/028 ,  H01S5/10

摘要： The present invention concerns an anti-reflection coating for semiconductor lasers, in particular a coating on the laser facet with advantageous properties resulting in improved reliability and reduced probability of specific breakdowns, especially so-called catastrophic optical damages (CODs). It is a quarter-wave coating with a predetermined reflectivity, preferably between 0 and 10% and consists of or comprises SiNx:H. It is preferably applied by a Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) process whose process parameters are controlled such that a desired optical thickness and refractive index of the coating are achieved. The PE-CVD process may be controlled to result in an Si/N ratio between about 0.5 and 1.5 and/or to produce a coating of essentially amorphous SiNx:H whose density approaches the density of crystalline Si3N4.

摘要翻译： 本发明涉及一种用于半导体激光器的抗反射涂层，特别是激光刻面上的涂层，具有有利的性能，导致改进的可靠性和降低特定击穿的可能性，特别是所谓的灾难性光学损伤（COD）。 它是具有预定反射率，优选在0和10％之间的四分之一波长涂层，由SiN x：H组成或包括SiN x。 其优选通过等离子体增强化学气相沉积（PE-CVD）工艺来施加，其工艺参数被控制，使得实现所需的光学厚度和涂层的折射率。 可以控制PE-CVD工艺以导致约0.5和1.5之间的Si / N比和/或产生基本上无定形的SiN x：H的涂层，其密度接近晶体Si的密度 3 3 3。