HIGH POWER SEMICONDUCTOR LASER DIODES
    1.
    发明申请
    HIGH POWER SEMICONDUCTOR LASER DIODES 审中-公开
    大功率半导体激光二极管

    公开(公告)号:US20090104727A1

    公开(公告)日:2009-04-23

    申请号:US12233658

    申请日:2008-09-19

    IPC分类号: H01S5/024 H01L21/02

    摘要: A high power laser source comprises a bar of laser diodes, a submount onto which said laser bar is affixed, and a cooler onto which said submount is affixed. The laser bar has a first coefficient of thermal expansion (CTEbar), the submount has a second coefficient of thermal expansion (CTEsub), and the cooler has a third coefficient of thermal expansion (CTEcool) the third coefficient (CTEcool) being higher than both said first coefficient (CTEbar) and said second coefficient (CTEsub). Contrary to the usual approach with a CTEsub matching the CTEbar, the second coefficient (CTEsub) is selected lower than both said first coefficient (CTEbar) and said third coefficient (CTEcool) according to the invention. A preferred range is CTEsub=k*CTEbar, with 0.4

    摘要翻译: 高功率激光源包括一根激光二极管,一个安装有所述激光条的基座,以及安装有所述底座的冷却器。 激光棒具有第一热膨胀系数(CTEbar),底座具有第二热膨胀系数(CTEsub),冷却器具有第三系数(CTEcool),第三系数(CTEcool)高于两者 所述第一系数(CTEbar)和所述第二系数(CTEsub)。 与通过与CTEbar匹配的CTEsub的通常方法相反,根据本发明,第二系数(CTEsub)被选择为低于所述第一系数(CTEbar)和所述第三系数(CTEcool)。 优选的范围是CTEsub = k * CTEbar,其中0.4

    High power semiconductor laser diodes
    2.
    发明授权
    High power semiconductor laser diodes 有权
    大功率半导体激光二极管

    公开(公告)号:US08320419B2

    公开(公告)日:2012-11-27

    申请号:US12873382

    申请日:2010-09-01

    IPC分类号: H01S3/04

    摘要: A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEbar on a submount having a second coefficient CTEsub and a cooler having a third coefficient CTEcool. The submount/cooler assembly shows an effective fourth coefficient CTEeff differing from CTEbar. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEeff is selected to be either lower than both CTEbar and CTEcool or is selected to be between CTEbar and CTEcool. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 μm thickness and a Mo layer of 100-400 μm thickness, or a single material with a varying CTEsub. Both result in a CTEsub varying across the submount's thickness.

    摘要翻译: 高功率激光源包括具有第二系数CTEsub的底座上具有第一热膨胀系数CTEbar的激光二极管棒和具有第三系数CTEcool的冷却器。 底座/冷却器组件显示与CTEbar不同的有效的第四系数CTEeff。 该差异导致激光器的活性区域的晶格由于机械应力而变形。 CTEeff选择为低于CTEbar和CTEcool,或者选择为CTEbar和CTEcool之间。 底座可以包括具有不同CTE的材料层,例如厚度为10-40μm的Cu层和100-400μm厚度的Mo层,或具有变化的CTEsub的单一材料。 两者都导致CTEsub在底座的厚度上变化。

    Anti-reflection coatings for semiconductor lasers
    3.
    发明授权
    Anti-reflection coatings for semiconductor lasers 有权
    半导体激光器防反射涂层

    公开(公告)号:US07173953B2

    公开(公告)日:2007-02-06

    申请号:US10735375

    申请日:2003-12-12

    IPC分类号: H01S5/00 H01L33/00

    CPC分类号: H01S5/028 H01S5/10

    摘要: The present invention concerns an anti-reflection coating for semiconductor lasers, in particular a coating on the laser facet with advantageous properties resulting in improved reliability and reduced probability of specific breakdowns, especially so-called catastrophic optical damages (CODs). It is a quarter-wave coating with a predetermined reflectivity, preferably between 0 and 10% and consists of or comprises SiNx:H. It is preferably applied by a Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) process whose process parameters are controlled such that a desired optical thickness and refractive index of the coating are achieved. The PE-CVD process may be controlled to result in an Si/N ratio between about 0.5 and 1.5 and/or to produce a coating of essentially amorphous SiNx:H whose density approaches the density of crystalline Si3N4.

    摘要翻译: 本发明涉及一种用于半导体激光器的抗反射涂层,特别是激光刻面上的涂层,具有有利的性能,导致改进的可靠性和降低特定击穿的可能性,特别是所谓的灾难性光学损伤(COD)。 它是具有预定反射率,优选在0和10%之间的四分之一波长涂层,由SiN x:H组成或包括SiN x。 其优选通过等离子体增强化学气相沉积(PE-CVD)工艺来施加,其工艺参数被控制,使得实现所需的光学厚度和涂层的折射率。 可以控制PE-CVD工艺以导致约0.5和1.5之间的Si / N比和/或产生基本上无定形的SiN x:H的涂层,其密度接近晶体Si的密度 3 3 3。

    HIGH POWER SEMICONDUCTOR LASER DIODES
    4.
    发明申请
    HIGH POWER SEMICONDUCTOR LASER DIODES 有权
    大功率半导体激光二极管

    公开(公告)号:US20110051758A1

    公开(公告)日:2011-03-03

    申请号:US12873382

    申请日:2010-09-01

    IPC分类号: H01S3/04 B23K31/02

    摘要: A high power laser source comprises at least a bar of laser diodes with a first coefficient of thermal expansion (CTEbar), a submount onto which said laser bar is affixed with a second coefficient of thermal expansion (CTEsub), and a cooler onto which said submount is affixed with a third coefficient of thermal expansion (CTEcool). The submount/cooling assembly exhibits an effective fourth coefficient of expansion (CTEeff). According to the invention, mechanical stress exerted to the laser bar improves reliability and optical performance. To effect this, CTEeff must differ from CTEbar, CTEeff≠CTEbar. Preferably, CTEeff should differ by a predetermined amount from CTEbar. The difference is achieved in two ways: either by selecting CTEsub>CTEbar and CTEsub≦CTEcool, or by selecting CTEsub

    摘要翻译: 高功率激光源包括至少一列具有第一热膨胀系数(CTEbar)的激光二极管,所述激光条固定在其上的第二热膨胀系数(CTEsub)的底座,以及所述第二热膨胀系数 底座固定有第三热膨胀系数(CTEcool)。 底座/冷却组件展现出有效的第四扩展系数(CTEeff)。 根据本发明,施加到激光棒的机械应力提高了可靠性和光学性能。 为了实现这一点,CTEeff必须与CTEbar不同,CTEeff≠CTEbar。 优选地,CTEeff应该与CTEbar不同的预定量。 差异通过两种方式实现:通过选择CTE> CTEbar和CTEsub≦̸ CTEcool,或者选择CTEsub