公开(公告)号：US08841727B1

公开(公告)日：2014-09-23

申请号：US13620161

申请日：2012-09-14

申请人： Andrew Walker ,  Helmut Puchner ,  Sai Dhanraj ,  Kevin Jang

发明人： Andrew Walker ,  Helmut Puchner ,  Sai Dhanraj ,  Kevin Jang

IPC分类号： H01L23/62

CPC分类号： H01L29/7436 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/1016 ,  H01L29/41758 ,  H01L29/42308 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835

摘要： A circuit with electrostatic discharge protection is described. In one case, the circuit includes trigger device configured to protect a component connected to a node of the circuit during an electrostatic discharge event, the trigger device includes an isolation structure interposed between a gate oxide layer and an extended drain region. A portion of the extended drain region proximate the isolation structure is substantially metal-free.

摘要翻译： 描述了具有静电放电保护的电路。 在一种情况下，电路包括被配置为在静电放电事件期间保护连接到电路节点的部件的触发装置，触发装置包括插入在栅氧化层和延伸漏极区之间的隔离结构。 靠近隔离结构的延伸漏极区域的一部分基本上是无金属的。

公开(公告)号：US08283727B1

公开(公告)日：2012-10-09

申请号：US12636596

申请日：2009-12-11

申请人： Andrew Walker ,  Helmut Puchner ,  Sai Dhanraj ,  Kevin Jang

发明人： Andrew Walker ,  Helmut Puchner ,  Sai Dhanraj ,  Kevin Jang

IPC分类号： H01L23/62

CPC分类号： H01L29/7436 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/1016 ,  H01L29/41758 ,  H01L29/42308 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835

摘要： A circuit with electrostatic discharge protection is described. In one case, the circuit includes trigger device configured to protect a component connected to a node of the circuit during an electrostatic discharge event, the trigger device includes an isolation structure interposed between a gate oxide layer and an extended drain region. A portion of the extended drain region proximate the isolation structure is substantially metal-free.

摘要翻译： 描述了具有静电放电保护的电路。 在一种情况下，电路包括被配置为在静电放电事件期间保护连接到电路节点的部件的触发装置，触发装置包括插入在栅氧化层和延伸漏极区之间的隔离结构。 靠近隔离结构的延伸漏极区域的一部分基本上是无金属的。

公开(公告)号：US08143673B1

公开(公告)日：2012-03-27

申请号：US12435320

申请日：2009-05-04

申请人： Andrew Walker ,  Helmut Puchner ,  Kevin Jang

发明人： Andrew Walker ,  Helmut Puchner ,  Kevin Jang

IPC分类号： H01L23/62

CPC分类号： H01L29/7436 ,  H01L29/7835

摘要： A circuit with electrostatic discharge protection is described. The circuit includes an output driver transistor with an extended drain contact region. The circuit also includes a distinct device configured to provide electrostatic discharge protection for the output driver transistor. The distinct device includes an electrostatic discharge protection transistor with an extended drain region.

摘要翻译： 描述了具有静电放电保护的电路。 该电路包括具有扩展的漏极接触区域的输出驱动晶体管。 电路还包括被配置为为输出驱动晶体管提供静电放电保护的不同器件。 不同的装置包括具有延伸的漏极区域的静电放电保护晶体管。

公开(公告)号：US07768068B1

公开(公告)日：2010-08-03

申请号：US11758451

申请日：2007-06-05

申请人： Kevin Jang ,  Bill Phan ,  Helmut Puchner

发明人： Kevin Jang ,  Bill Phan ,  Helmut Puchner

IPC分类号： H01L29/735

CPC分类号： H01L29/0847 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor topography and a method for forming a drain extended metal oxide semiconductor (DEMOS) transistor is provided. The semiconductor topography includes at least a portion of an extended drain contact region formed within a well region and a plurality of dielectrically spaced extension regions interposed between the well region and a channel region underlying a gate structure of the topography. The channel region of a first conductivity type and the well region of a second conductivity type opposite of the first conductivity type. In addition, the plurality of dielectrically spaced extension regions and the extended drain contact region are of the second conductivity type. Each of the plurality of dielectrically spaced extension regions has a lower net concentration of electrically active impurities than the well region. Moreover, the extended drain contact region has a greater net concentration of electrically active impurities than the well region.

摘要翻译： 提供半导体形貌和形成漏极延伸金属氧化物半导体（DEMOS）晶体管的方法。 半导体形貌包括形成在阱区内的扩展漏极接触区域的至少一部分和介于阱区域和位于形貌的栅极结构之下的沟道区域之间的多个介电间隔的延伸区域。 第一导电类型的沟道区和与第一导电类型相反的第二导电类型的阱区。 此外，多个介电间隔的延伸区域和延伸的漏极接触区域是第二导电类型。 多个介电间隔延伸区域中的每一个具有比阱区域更低的电活性杂质的净浓度。 此外，延伸的漏极接触区域具有比阱区域更大的电活性杂质的净浓度。

公开(公告)号：US20050100781A1

公开(公告)日：2005-05-12

申请号：US10702003

申请日：2003-11-06

申请人： Kevin Jang ,  Wen Huang

发明人： Kevin Jang ,  Wen Huang

IPC分类号： H01M2/12 ,  H01M2/36 ,  H01M6/32 ,  H01M6/38 ,  H01M6/50 ,  H01M10/42 ,  H01M12/06

CPC分类号： H01M6/385 ,  H01M2/36 ,  H01M6/38 ,  H01M10/425 ,  H01M10/4257 ,  H01M12/06 ,  H01M2200/00

摘要： This invention provides an actively controlled electrochemical cell and a smart battery containing such a cell with a programmed-timing activation capability. As a preferred embodiment, the cell includes (a) a cathode, an anode, a porous separator electronically insulating the cathode from the anode, and an electrolyte, wherein the anode is initially isolated from the electrolyte fluid prior to the first use of the cell; (b) an actuator in actuation relation to the electrolyte or the anode; and (c) a control device in control relation to the actuator for sending programmed signals to the actuator to activate the cell by allowing a desired amount of an active anode material at a time to be exposed to the electrolyte during the first use and/or successive uses of the cell. The cell or battery has an essentially infinite shell life and an exceptionally long operating life. The battery is particularly useful for powering microelectronic or communication devices such as mobile phones, laptop computers, and palm computers.

摘要翻译： 本发明提供一种主动控制的电化学电池和包含具有编程定时激活能力的这种电池的智能电池。 作为优选实施例，电池包括（a）阴极，阳极，将阳极与阳极电绝缘的多孔隔板和电解质，其中阳极在电池第一次使用之前最初与电解质液体隔离 ; （b）与电解质或阳极致动的致动器; 和（c）与致动器控制关系的控制装置，用于通过在第一次使用期间允许期望量的活性阳极材料暴露于电解质，并且/或 连续使用细胞。 电池或电池具有基本上无限的壳体寿命和非常长的使用寿命。 电池特别适用于为微电子或通信设备（如手机，笔记本电脑和掌上电脑）供电。