公开(公告)号：US4342148A

公开(公告)日：1982-08-03

申请号：US231501

申请日：1981-02-04

Applicant: Anthony J. SpringThorpe ,  Agnes Margittai

Inventor： Anthony J. SpringThorpe ,  Agnes Margittai

IPC: H01L33/00 ,  H01L21/208

CPC classification number: H01L33/0062 ,  H01L33/0025 ,  Y10S438/964

Abstract: In the manufacture of double heterostructure laser diodes using liquid phase epitaxy a source crystal precedes the laser substrate crystal through the process to ensure saturation of the various melts from which epitaxial growth is obtained. The source crystal has hitherto been discarded. The source crystal, since it immediately precedes the substrate crystal, also experiences epitaxial growth of a heterostructure but with heterostructure layer thicknesses unsuited for laser diode fabrication. By suitable processing of the source crystal after it is formed with a heterostructure, light emitting diodes can be produced so contributing to a 50% reduction in materials cost.

Abstract translation: 在使用液相外延的双异质结构激光二极管的制造中，源晶体通过该过程在激光基板晶体之前，以确保获得外延生长的各种熔体的饱和。 源晶体迄今已被丢弃。 源晶体，因为它紧接在衬底晶体之前，也经历异质结构的外延生长，但是异质结构层厚度不适于激光二极管制造。 通过在形成异质结构之后对源晶体进行适当的处​​理，可以制造发光二极管，从而有助于材料成本降低50％。

公开(公告)号：US4342944A

公开(公告)日：1982-08-03

申请号：US186967

申请日：1980-09-15

Applicant: Anthony J. SpringThorpe

Inventor： Anthony J. SpringThorpe

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01J1/70

CPC classification number: H01L33/382 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/46 ,  H01L33/24 ,  H01L33/40

Abstract: A surface emitting light emitting diode (LED) has a reflecting element to redirect light emitted away from the light emitting region towards an exit window. The LED bottom contact is formed over the reflecting element and a current confining path is set up within the LED to funnel current between the top and bottom contacts around the reflecting element and through the light emitting region.

Abstract translation: 表面发射发光二极管（LED）具有反射元件，用于将从发光区域发射的光朝向出射窗口重定向。 LED底部触点形成在反射元件上方，并且在LED内设置电流限制路径，以在反射元件周围的顶部和底部触点之间并通过发光区域漏斗电流。