公开(公告)号：US06653213B2

公开(公告)日：2003-11-25

申请号：US09741350

申请日：2000-12-21

Applicant: Anthony J. Springthorpe ,  Richard W. Streater ,  Aniket Joshi

Inventor： Anthony J. Springthorpe ,  Richard W. Streater ,  Aniket Joshi

IPC: H01L2100

CPC classification number: H01L33/305 ,  B82Y20/00 ,  H01L21/2205 ,  H01S5/305 ,  H01S5/34

Abstract: A structure for doping of III-V compounds is provided. The structure is a multi-layered structure in which layers of dopant are alternated with layers of initially undoped III-V compound. Dopant diffuses from the layers of dopant into the layers of III-V compound. The structure does not facilitate the introduction of impurities into the III-V compound during the diffusion of the dopant.

公开(公告)号：US4889830A

公开(公告)日：1989-12-26

申请号：US243138

申请日：1988-09-09

Applicant: Anthony J. Springthorpe ,  Agnes Margittai ,  David Eger

Inventor： Anthony J. Springthorpe ,  Agnes Margittai ,  David Eger

IPC: H01L21/223

CPC classification number: H01L21/2233 ,  Y10S148/04 ,  Y10S252/95 ,  Y10S438/909

Abstract: Zinc is diffused into indium phosphide in the presence of cadmium to prevent degradation of the indium phosphide surface.

Abstract translation: 锌在镉存在下扩散到磷化铟中以防止磷化铟表面的劣化。

公开(公告)号：US4493287A

公开(公告)日：1985-01-15

申请号：US446441

申请日：1982-12-03

Applicant: Anthony J. Springthorpe

Inventor： Anthony J. Springthorpe

IPC: C30B31/10 ,  C23C13/08

CPC classification number: C30B31/103 ,  Y10S118/90

Abstract: To secure accurate control over rapid diffusion such as the diffusion of zinc into gallium arsenide, the source and slices to be processed are isolated from one another during an initial warm-up period. This is done using one vessel for the crystal slice and a second vessel for the source. The source vessel initially blocks an opening in the slice vessel while the source and slice are brought to the desired diffusion temperature. The source vessel is then slid through the opening to a diffusing position in which a trailing part of the source vessel again plugs the opening in the slice vessel and in which an open part of the source vessel is now in the interior of the slice vessel. Use of this arrangement avoids the uncontrolled diffusion which occurs in current diffusion capsules during initial heating of the capsule.

Abstract translation: 为了确保对快速扩散的准确控制，例如锌向砷化镓的扩散，待加工的源和切片在初始预热期间彼此隔离。 这是使用一个用于晶体切片的容器和用于源的第二容器来完成的。 源容器首先阻挡切片容器中的开口，同时使源和切片达到期望的扩散温度。 然后将源容器滑动通过开口到扩散位置，在该扩散位置，源容器的尾部再次插入切片容器中的开口，并且源容器的开放部分现在处于切片容器的内部。 使用这种布置避免了在胶囊的初始加热期间在当前扩散胶囊中发生的不受控制的扩散。

公开(公告)号：US4342148A

公开(公告)日：1982-08-03

申请号：US231501

申请日：1981-02-04

Applicant: Anthony J. SpringThorpe ,  Agnes Margittai

Inventor： Anthony J. SpringThorpe ,  Agnes Margittai

IPC: H01L33/00 ,  H01L21/208

CPC classification number: H01L33/0062 ,  H01L33/0025 ,  Y10S438/964

Abstract: In the manufacture of double heterostructure laser diodes using liquid phase epitaxy a source crystal precedes the laser substrate crystal through the process to ensure saturation of the various melts from which epitaxial growth is obtained. The source crystal has hitherto been discarded. The source crystal, since it immediately precedes the substrate crystal, also experiences epitaxial growth of a heterostructure but with heterostructure layer thicknesses unsuited for laser diode fabrication. By suitable processing of the source crystal after it is formed with a heterostructure, light emitting diodes can be produced so contributing to a 50% reduction in materials cost.

Abstract translation: 在使用液相外延的双异质结构激光二极管的制造中，源晶体通过该过程在激光基板晶体之前，以确保获得外延生长的各种熔体的饱和。 源晶体迄今已被丢弃。 源晶体，因为它紧接在衬底晶体之前，也经历异质结构的外延生长，但是异质结构层厚度不适于激光二极管制造。 通过在形成异质结构之后对源晶体进行适当的处​​理，可以制造发光二极管，从而有助于材料成本降低50％。

公开(公告)号：US4284884A

公开(公告)日：1981-08-18

申请号：US138747

申请日：1980-04-09

Applicant: John C. Dyment ,  Jozef Straus ,  Tibor F. I. Kovats ,  William J. Sinclair ,  Anthony J. Springthorpe

Inventor： John C. Dyment ,  Jozef Straus ,  Tibor F. I. Kovats ,  William J. Sinclair ,  Anthony J. Springthorpe

IPC: H01L33/00 ,  G02B27/00

CPC classification number: H01L27/15 ,  H01L25/167 ,  H01L2924/0002

Abstract: An electro-optic device for stabilizing the output level of a Burrus-type light emitting diode (LED) utilizes a photodiode to monitor side emission from an active region of the LED. Side emission closely tracks top emission, which is launched into an output fiber. An electrical analog is derived from the monitored side emission and is applied in a feedback loop to control modulation level or bias current to the LED. In this way, peak optical output (for digital systems) or r.m.s. output and linearity (for analog systems) is stabilized. The monitoring photodiode and the LED may be spatially separate or may form a unitary structure.

Abstract translation: 用于稳定Burrus型发光二极管（LED）的输出电平的电光器件利用光电二极管监测来自LED的有源区域的侧发射。 侧面发射密切跟踪顶部发射，发射到输出光纤。 电气模拟源自监控侧发射，并且被施加在反馈环路中以控制到LED的调制电平或偏置电流。 以这种方式，峰值光输出（用于数字系统）或r.m.s. 输出和线性（用于模拟系统）稳定。 监控光电二极管和LED可以在空间上分离或者可以形成一体的结构。

公开(公告)号：US4163953A

公开(公告)日：1979-08-07

申请号：US813678

申请日：1977-07-07

Applicant: Anthony J. Springthorpe ,  John C. Dyment

Inventor： Anthony J. Springthorpe ,  John C. Dyment

IPC: G02B6/42 ,  H01S3/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/18 ,  H01S5/42 ,  H01S3/19

CPC classification number: H01S5/42 ,  G02B6/4202 ,  G02B6/4214 ,  H01S5/026 ,  H01S5/18 ,  H01S3/005 ,  H01S5/005

Abstract: A double heterostructure laser has a first confining layer on the substrate, an active layer on the first confining layer and a second confining layer on the active layer. A groove is etched through the second confining layer and active layer to form a reflecting surface at approximately 45.degree. to the plane of the active layer. The resonant cavity is formed between a cleaned end surface and a surface at the substrate. A hole through the substrate to the first confining layer is aligned with the reflecting surface for emission therethrough.

Abstract translation: 双异质结构激光器在衬底上具有第一限制层，在第一限制层上具有活性层，在活性层上具有第二限制层。 蚀刻通过第二限制层和有源层的沟槽，以在有源层的平面大约45°处形成反射表面。 谐振腔形成在清洁的端表面和衬底表面之间。 通过基板到第一限制层的孔与反射表面对准以通过其传射。

公开(公告)号：US4329189A

公开(公告)日：1982-05-11

申请号：US282863

申请日：1981-07-13

Applicant: Julian P. Noad ,  Anthony J. Springthorpe ,  Christopher M. Look

Inventor： Julian P. Noad ,  Anthony J. Springthorpe ,  Christopher M. Look

IPC: H01L21/20 ,  H01L33/00 ,  H01L33/24 ,  H01S5/223

CPC classification number: H01L33/24 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/0062 ,  H01S5/2232 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/11

Abstract: In a fabricating a III-V compound, for example, GaAs, having a layered structure a first layer is grown on a planar substrate by a vapor deposition process adapted to produce differential growth while a subsequent layer is grown by a deposition process which restores planarity. In this way a uniformly thick combination layer is produced with a non-planar junction between its composite layers. Particularly in the fabrication of channelled substrate double heterostructure lasers, a channelled blocking layer is grown by organo-metallic pyrolysis (OMP) and a subsequent confining layer is grown using liquid phase epitaxy (LPE). The OMP process produces a channel with flanking shoulder portions which permit LPE growth of a very thin confining layer immediately above the shoulder portions thereby improving linearity of the device.

Abstract translation: 在制造III-V族化合物时，例如，具有层状结构的第一层的GaAs通过适于产生差异生长的气相沉积工艺在平面基板上生长，而随后的层通过沉积工艺生长，其恢复平面度 。 以这种方式，在其复合层之间产生具有非平面结的均匀厚的组合层。 特别是在通道衬底双异质结构激光器的制造中，通过有机金属热解（OMP）生长通道阻挡层，并且随后使用液相外延（LPE）生长限制层。 OMP过程产生具有侧翼部分的通道，其允许紧邻肩部部分上方的非常薄的限制层的LPE生长，从而提高装置的线性。

公开(公告)号：US4323859A

公开(公告)日：1982-04-06

申请号：US118653

申请日：1980-02-04

Applicant: Julian P. Noad ,  Anthony J. Springthorpe ,  Christopher M. Look

Inventor： Julian P. Noad ,  Anthony J. Springthorpe ,  Christopher M. Look

IPC: H01L33/00 ,  H01S5/223 ,  H01S3/19

CPC classification number: H01L33/0062 ,  H01S5/2232

Abstract: In fabricating a III-V compound, for example, GaAs, having a layered structure a first layer is grown on a planar substrate by a vapor deposition process adapted to produce differential growth while a subsequent layer is grown by a deposition process which restores planarity. In this way, a uniformly thick combination layer is produced with a non-planar junction between its composite layers. Particularly in the fabrication of channelled substrate double heterostructure lasers, a channelled blocking layer is grown by organo-metallic pyrolysis (OMP) and a subsequent confining layer is grown using liquid phase epitaxy (LPE). The OMP process produces a channel with flanking shoulder portions which permit LPE growth of a very thin confining layer immediately above the shoulder portions thereby improving linearity of the device.

Abstract translation: 在制造III-V族化合物时，例如，具有层状结构的第一层的GaAs通过适于产生差异生长的气相沉积工艺在平面基板上生长，而后续层通过恢复平面性的沉积工艺生长。 以这种方式，在其复合层之间产生具有非平面结的均匀厚的组合层。 特别是在通道衬底双异质结构激光器的制造中，通过有机金属热解（OMP）生长通道阻挡层，并且随后使用液相外延（LPE）生长限制层。 OMP过程产生具有侧翼部分的通道，其允许紧邻肩部部分上方的非常薄的限制层的LPE生长，从而提高装置的线性。

公开(公告)号：US4342944A

公开(公告)日：1982-08-03

申请号：US186967

申请日：1980-09-15

Applicant: Anthony J. SpringThorpe

Inventor： Anthony J. SpringThorpe

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01J1/70

CPC classification number: H01L33/382 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/46 ,  H01L33/24 ,  H01L33/40

Abstract: A surface emitting light emitting diode (LED) has a reflecting element to redirect light emitted away from the light emitting region towards an exit window. The LED bottom contact is formed over the reflecting element and a current confining path is set up within the LED to funnel current between the top and bottom contacts around the reflecting element and through the light emitting region.

Abstract translation: 表面发射发光二极管（LED）具有反射元件，用于将从发光区域发射的光朝向出射窗口重定向。 LED底部触点形成在反射元件上方，并且在LED内设置电流限制路径，以在反射元件周围的顶部和底部触点之间并通过发光区域漏斗电流。