公开(公告)号：US06433640B1

公开(公告)日：2002-08-13

申请号：US09865266

申请日：2001-05-25

申请人： Anthony M. Pavio ,  Lei Zhao

发明人： Anthony M. Pavio ,  Lei Zhao

IPC分类号： H03F368

CPC分类号： H03F3/607

摘要： Methods and apparatus (40) of amplifying a telecommunication signal (41) are provided in accordance with the present invention. The apparatus (40) comprises an input transmission line (48) configured to receive the telecommunication signal (41), an output transmission line (50) configured to provide an amplified output of the telecommunication signal (41) and N amplifier sections (42, 44, 45, 46) having a transistor (52) connected to the input transmission line (48) and the output transmission line (50). The apparatus (40) further comprises a waveform controller (84) connected to the transistor 52 and also configured to identify a signal level of the telecommunication signal 41. The waveform controller 84 is further configured to generate an independent biasing voltage for the transistor 52 such that the at least one of the N amplifier sections (42, 44, 45, 46) is configured for active operation and non-active operation based at least in part upon an evaluation of the signal level and an output power of the apparatus is reduced without a substantial degradation in an efficiency of the apparatus.

摘要翻译： 根据本发明提供放大电信信号（41）的方法和设备（40）。 装置（40）包括被配置为接收电信信号（41）的输入传输线（48），被配置为提供电信信号（41）的放大输出和N个放大器部分（42）的输出传输线（50） 44,45,46）具有连接到输入传输线（48）和输出传输线（50）的晶体管（52）。 装置（40）还包括连接到晶体管52的波形控制器（84），并且还被配置为识别电信信号41的信号电平。波形控制器84还被配置为产生晶体管52的独立偏置电压， N个放大器部分（42,44,45,46）中的至少一个被配置用于至少部分地基于信号电平的评估和装置的输出功率的有源操作和非有效操作 而不会显着降低设备的效率。

公开(公告)号：US06377125B1

公开(公告)日：2002-04-23

申请号：US09809377

申请日：2001-03-15

申请人： Anthony M. Pavio ,  Lei Zhao

发明人： Anthony M. Pavio ,  Lei Zhao

IPC分类号： H03F360

CPC分类号： H03F3/607

摘要： A distributed amplifier (40) and a method (100) of operating the distributed amplifier (40) are provided in accordance with the present invention. The distributed amplifier (40) comprises an input transmission line (48), an output transmission line (50) and N amplifier sections (42,44,46) having a transistor (52) connected to the input transmission line (48) and the output transmission line (50). The distributed amplifier (40) also comprises N independent biasing sources (82,84,86) configured to provide N independent biasing voltages for each transistor (52) of the N amplifier sections (42,44,46) for active operation, wherein the distributed amplifier (40) is configured such that when a first independent biasing voltage of said N independent biasing voltages is modified for a first transistor of a first section of the N amplifier sections, the first transistor of the first section of the N amplifier sections is configured for a non-active operation and an output power of the distributed amplifier (40) is reduced without a substantial degradation in an efficiency of the distributed amplifier (40).

摘要翻译： 根据本发明，提供分布式放大器（40）和操作分布式放大器（40）的方法（100）。 分布式放大器（40）包括输入传输线（48），输出传输线（50）和具有连接到输入传输线（48）的晶体管（52）的N个放大器部分（42,44,46） 输出传输线（50）。 分布式放大器（40）还包括N个独立偏置源（82,84,86），其被配置为为N个放大器部分（42,44,46）的每个晶体管（52）提供N个独立的偏置电压用于主动操作，其中 分布式放大器（40）被配置为使得当对于N个放大器部分的第一部分的第一晶体管修改所述N个独立偏置电压的第一独立偏置电压时，N个放大器部分的第一部分的第一晶体管是 配置为非活动操作，并且分布式放大器（40）的输出功率被降低，而分布式放大器（40）的效率没有显着劣化。

公开(公告)号：US06664935B1

公开(公告)日：2003-12-16

申请号：US10208961

申请日：2002-07-31

申请人： William John Thompson ,  Anthony M. Pavio ,  Lei Zhao ,  John C. Estes

发明人： William John Thompson ,  Anthony M. Pavio ,  Lei Zhao ,  John C. Estes

IPC分类号： H01Q150

CPC分类号： H01P5/02

摘要： A broadband impedance matching integrated circuit apparatus comprising an alternating current ground plane, a direct current ground plane positioned proximate to the alternating current ground plane, a first conductive transmission line positioned a distance from the alternating current and direct current ground planes, a dielectric material layer with a thickness positioned on the first conductive transmission line, a second conductive transmission line positioned on the dielectric material layer wherein the first and second conductive transmission lines are electrically interconnected to behave as an electromagnetically coupled tapped autotransformer.

摘要翻译： 一种宽带阻抗匹配集成电路装置，包括交流接地平面，邻近交流接地平面定位的直流接地平面，距离交流和直流接地平面一定距离的第一导电传输线，电介质材料层 其厚度位于第一导电传输线上，位于介电材料层上的第二导电传输线，其中第一和第二导电传输线电互连以表现为电磁耦合抽头自耦变压器。

公开(公告)号：US06819200B2

公开(公告)日：2004-11-16

申请号：US10206164

申请日：2002-07-26

申请人： Lei Zhao ,  Anthony M. Pavio

发明人： Lei Zhao ,  Anthony M. Pavio

IPC分类号： H03H500

CPC分类号： H03H7/42 ,  H03H7/38

摘要： A balun and transformer system (201) is provided in which a balun (112) is cascaded between two 4:1 impedance transformers (102, 110) to form a 16:1 broadband impedance transformation for push-pull amplifier applications (200). The balun (112) is configured in a Marchand configuration. The balun and transformers (201) are formed with coupled lines realized with a very thin layer of ceramic. Additional coupling between the gap in the balun (112) is achieved by an embedded capacitor (260) built in the balun's ceramic. DC bias supply (294, 296) to the power amplifier (106) is achieved by using the hot plate of decoupling capacitors (298, 299), which serve as a floating ground plane to the whole application (200).

摘要翻译： 提供了一种平衡 - 不平衡变压器和变压器系统（201），其中平衡 - 不平衡变压器（112）级联在两个4:1阻抗变压器（102,110）之间，以形成用于推挽放大器应用（200）的16:1宽带阻抗变换。 平衡 - 不平衡变换器（112）以Marchand配置配置。 平衡不平衡转换器和变压器（201）形成有由非常薄的陶瓷层实现的耦合线。 平衡 - 不平衡转换器（112）中的间隙之间的附加耦合由内置在平衡 - 不平衡转换器的陶瓷中的嵌入式电容器（260）实现。 通过使用用作整个应用（200）的浮动接地平面的去耦电容器（298,299）的热板来实现到功率放大器（106）的直流偏置电源（294,296）。

公开(公告)号：US06714095B2

公开(公告)日：2004-03-30

申请号：US10174238

申请日：2002-06-18

申请人： Anthony M. Pavio ,  Lei Zhao

发明人： Anthony M. Pavio ,  Lei Zhao

IPC分类号： H03A738

CPC分类号： H01P9/00

摘要： A constant “R” network distributed amplifier formed in a multi-layer, low temperature co fired ceramic structure comprises multiple cascaded constant “R” networks for amplifying a signal applied thereto. Each one of the multiple cascaded constant “R” networks is formed in the ceramic structure and includes a plurality of ceramic layers each of which have a top and bottom planar surfaces which, when bonded together form the ceramic structure. A transmission line is formed on the top surfaces of each of the ceramic layers having a beginning end and a distal end and has a generally rectangular shape. The distal end of the transmission line formed on a lower ceramic layer is connected to the beginning end of the transmission line formed on the next adjacent upper ceramic layer by way of vias formed in the ceramic layers through which metal conductive material is formed there through. The transmission lines and the capacitance established between the individual layers form a LC structure. An output is provided at the middle portion of the transmission line formed on the middle ceramic layer that is coupled to the drain of a FET.

摘要翻译： 形成在多层低温共烧陶瓷结构中的恒定“R”网络分布式放大器包括用于放大施加到其上的信号的多个级联常数“R”网络。 多个级联常数“R”网络中的每一个形成在陶瓷结构中，并且包括多个陶瓷层，每个陶瓷层具有顶部和底部平坦表面，当它们结合在一起形成陶瓷结构时。 在具有起始端和远端的每个陶瓷层的顶表面上形成传输线，并且具有大致矩形的形状。 形成在下陶瓷层上的传输线的前端通过形成在陶瓷层中的通孔连接到形成在下一个相邻的上陶瓷层上的传输线的起始端，通过该通孔形成金属导电材料。 传输线和在各个层之间建立的电容形成LC结构。 在形成在与FET的漏极耦合的中间陶瓷层上的传输线的中间部分处提供输出。

公开(公告)号：US06614307B1

公开(公告)日：2003-09-02

申请号：US10211825

申请日：2002-08-02

申请人： Lei Zhao ,  Anthony M. Pavio

发明人： Lei Zhao ,  Anthony M. Pavio

IPC分类号： H03F360

CPC分类号： H03F3/607 ,  H01L2924/0002 ,  H03F2200/541 ,  H01L2924/00

摘要： A hybrid low voltage distributed power amplifier structure (300) provides improved efficiency by forming drain transmission line inductors (323) on a substrate (306) while the rest of the amplifier is built in IC form (302). A wirebond interconnection (330) is made between the IC's drainline capacitors (324) and the substrate's drainline inductors (323) which are a higher impedance point in the circuit. As a result, the wirebond inductance becomes negligible and has little or no impact on the power amplifier's performance.

摘要翻译： 混合低压分布式功率放大器结构（300）通过在衬底（306）上形成漏极传输线电感（323）而放大器的其余部分内置于IC形式（302）中来提高效率。 在IC的排水线电容器（324）和衬底的漏极线电感器（323）之间形成引线接合（330），该电路是电路中较高的阻抗点。 因此，引线键合电感可以忽略不计，对功率放大器的性能影响很小或没有影响。

公开(公告)号：US06653911B2

公开(公告)日：2003-11-25

申请号：US10120170

申请日：2002-04-10

申请人： John C. Estes ,  Lei Zhao ,  Anthony M. Pavio ,  William J. Thompson

发明人： John C. Estes ,  Lei Zhao ,  Anthony M. Pavio ,  William J. Thompson

IPC分类号： H01P504

CPC分类号： H01P5/02

摘要： A stripline integrated circuit apparatus comprising a first ground plane, a stripline section positioned on the first ground plane, the stripline section including N stripline regions where N is a whole number greater than or equal to one, wherein each stripline region includes a stripline sandwiched therebetween a first dielectric layer with a thickness and a second dielectric layer with a thickness where each adjacent stripline is connected in parallel, wherein each adjacent stripline region is separated by a ground plane, a second ground plane positioned on the stripline region, and wherein the plurality of stripline sections are formed and electrically connected in series. The distances between the striplines and the ground planes are adjusted to vary the input and output impedance.

公开(公告)号：US06873221B2

公开(公告)日：2005-03-29

申请号：US10428175

申请日：2003-04-30

申请人： Rodolfo Lucero ,  Anthony M. Pavio

发明人： Rodolfo Lucero ,  Anthony M. Pavio

IPC分类号： H01P5/10

CPC分类号： H01P5/10

摘要： An exemplary system and method for minimizing degradation effects attributed to misalignment in the production of multilayer balun devices is disclosed as comprising inter alia any combination of coupled line folding that effectively provides a degenerate or otherwise reducible representation of line segment components wherein at least about half of the line segments (by, for example, linear distance or by line volume) are substantially orthogonal to the remaining half.

摘要翻译： 公开了用于最小化归因于多层巴伦装置的生产中的未对准的劣化效应的示例性系统和方法，其特别包括耦合线折叠的任何组合，其有效地提供线段成分的简并或可缩减表示，其中至少约一半 线段（例如，通过线性距离或线路体积）基本上与剩下的一半正交。

公开(公告)号：US5773887A

公开(公告)日：1998-06-30

申请号：US879453

申请日：1997-06-20

申请人： Anthony M. Pavio ,  William M. Vassar

发明人： Anthony M. Pavio ,  William M. Vassar

IPC分类号： H01L23/66 ,  H01L23/34 ,  H01L29/80 ,  H01L31/112

CPC分类号： H01L23/66 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A high frequency semiconductor component (10) includes a first substrate (12) having a first surface (13) opposite a second surface (14), a first electrically conductive layer (16) supported by the first surface (13) of the first substrate (12), a second electrically conductive layer (17) supported by the second surface (14) of the first substrate (12) wherein the second electrically conductive layer (17) is electrically coupled to the first electrically conductive layer (16), a second substrate (19) having a first surface (20) and a second surface (21), a third electrically conductive layer (22) supported by the first surface (20) of the second substrate (19), and an electrically insulating layer (23) between the second and third electrically conductive layers (17, 22) wherein the second and third electrically conductive layers (17, 22) are electrically coupled together through the electrically insulating layer (23).

摘要翻译： 高频半导体元件（10）包括具有与第二表面（14）相对的第一表面（13）的第一衬底（12），由第一衬底的第一表面（13）支撑的第一导电层（16） （12），由所述第一基板（12）的第二表面（14）支撑的第二导电层（17），其中所述第二导电层（17）电耦合到所述第一导电层（16），所述第二导电层 具有第一表面（20）和第二表面（21）的第二基底（19），由第二基底（19）的第一表面（20）支撑的第三导电层（22）和电绝缘层 第二和第三导电层（17,22）之间的第二和第三导电层（17,22），其中第二和第三导电层（17,22）通过电绝缘层（23）电耦合在一起。

公开(公告)号：US06971162B2

公开(公告)日：2005-12-06

申请号：US10437721

申请日：2003-05-13

申请人： John C. Estes ,  Rodolfo Lucero ,  Anthony M. Pavio

发明人： John C. Estes ,  Rodolfo Lucero ,  Anthony M. Pavio

IPC分类号： H01P1/203 ,  H03H9/02 ,  H03H9/05 ,  H05K1/02 ,  H05K1/16 ,  H05K1/18 ,  H05K3/30

CPC分类号： H03H9/0557 ,  H01P1/203 ,  H03H9/02913 ,  H05K1/0218 ,  H05K1/0237 ,  H05K1/0243 ,  H05K1/16 ,  H05K1/181 ,  H05K1/185 ,  H05K2201/09618 ,  H05K2201/09972 ,  H05K2201/10371 ,  Y10T29/4913 ,  Y10T29/49137 ,  Y10T29/49146 ,  Y10T29/49165 ,  Y10T29/53174 ,  Y10T29/53178

摘要： An exemplary system and method for providing differential adjustment of the height of a multilayer substrate in localized areas for improved Q-factor performance of RF devices is disclosed as comprising inter alia: a multilayer substrate (200); an RF component (210) embedded in the substrate (200); a surface mounted component (220); and an RF shield (260) disposed next to the surface mounted component (220), wherein the height of the shield (260) does not extend substantially beyond the height of the surface mounted component (220). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize Q, RF performance and/or material characteristics. Exemplary embodiments of the present invention representatively provide for high-performance, high-quality RF devices that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.

摘要翻译： 公开了一种用于在局部区域中对多层基板的高度进行差分调整以提高RF器件的Q因子性能的示例性系统和方法，其特别包括：多层衬底（200）; 嵌入在所述基板（200）中的RF部件（210）; 表面安装部件（220）; 以及靠近所述表面安装部件（220）设置的RF屏蔽件（260），其中所述屏蔽件（260）的高度基本上不超过所述表面安装部件（220）的高度。 公开的特征和规范可以被不同地控制，配置，适配或以其他方式任意地修改，以进一步改善或者优化Q，RF性能和/或材料特性。 本发明的示例性实施例代表性地提供了可以容易地与用于改进频率响应，设备包装形状因子，重量和/或其他制造，设备或材料性能度量的现有技术结合的高性能，高质量的RF设备 。