公开(公告)号：US5963779A

公开(公告)日：1999-10-05

申请号：US211606

申请日：1998-12-15

申请人： Anthony W. Leigh ,  Joe W. McPherson ,  Kenan J. Dickerson

发明人： Anthony W. Leigh ,  Joe W. McPherson ,  Kenan J. Dickerson

IPC分类号： H01L21/822 ,  G01R31/28 ,  H01L21/66 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/092 ,  H01L29/78 ,  H01L21/00

CPC分类号： G01R31/2884 ,  G01R31/2856

摘要： Integrated circuit architectures and methods of operation are provided that allow for the connection of a negative back-gate bias voltage to substrate contacts 24, 90, and 56 during burn-in operations. Accordingly, latch up conditions are prevented during burn-in operations when a circuit is especially vulnerable to such conditions and a grounded substrate is provided to allow for the most efficient operation of the circuit during normal conditions.

摘要翻译： 提供集成电路架构和操作方法，其允许在老化操作期间将负的背栅极偏置电压连接到衬底触点24,90和56。 因此，当电路特别容易受到这种情况的影响时，在老化操作期间可以防止闩锁状态，并且提供接地的基板以允许电路在正常状态下的最有效的操作。