公开(公告)号：US20230275173A1

公开(公告)日：2023-08-31

申请号：US18027329

申请日：2021-09-22

申请人： Antora Energy, Inc.

发明人： Andrew Joseph PONEC ,  Leah Yvonne KURITZKY ,  Emmett Edward PERL ,  Brendan Melville KAYES

IPC分类号： H01L31/052 ,  H01L21/78 ,  H01L21/02 ,  H01L31/054

CPC分类号： H01L31/052 ,  H01L21/7813 ,  H01L21/02293 ,  H01L21/02277 ,  H01L31/054 ,  H01L2031/0344

摘要： The technology relates to producing an optoelectronic device. A method for forming an optoelectronic device on a substrate may include growing an epitaxial structure on the substrate, wherein the substrate comprises a semiconductor material having a lattice constant between 5.7 and 6.0 Angstroms, and wherein the epitaxial structure includes an epitaxial device layer, then depositing a metal layer on the epitaxial structure, and selectively removing the epitaxial layer, thereby separating the optoelectronic device from the substrate. An optoelectronic device may include an optoelectronic device structure including an epitaxial device layer having a lattice constant between 5.7 and 6.0 Angstroms, a metal layer deposited onto a surface of the optoelectronic device structure, and a carrier structure, wherein the optoelectronic device comprises a thin film, single crystal device.