公开(公告)号：US20240404830A1

公开(公告)日：2024-12-05

申请号：US18203417

申请日：2023-05-30

Applicant: Applied Materials, Inc.

Inventor： Radhika P. Patil ,  Tatsuya E. Sato ,  Haoyan Sha ,  Abinash Tripathy ,  Michael S. Jackson ,  Janardhan Devrajan

IPC: H01L21/28

Abstract: Embodiments of the disclosure relate to methods of depositing seam-free gapfill. In some embodiments, the gapfill consists of titanium nitride. The gapfill methods comprise forming a first layer and a second layer. The firs layer is formed without treatment or densification, while the second layer is formed with periodic treatment. The resulting gapfill in advantageously seam-free.