公开(公告)号：US20250151374A1

公开(公告)日：2025-05-08

申请号：US18887821

申请日：2024-09-17

Applicant: Applied Materials, Inc.

Inventor： Nicolas Louis BREIL ,  Lisa MCGILL ,  Manoj VELLAIKAL ,  Bocheng CAO ,  Pei LIU ,  Avgerinos V. GELATOS

IPC: H01L21/8238 ,  H01L23/66 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and/or a p-type MOS (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and/or a p-MOS cavity in an exposed surface of the p-MOS region, wherein the cavity shaping process is configured to increase the surface area of the exposed surface of the n-MOS region or the p-MOS region. In some embodiments, the method includes performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.