公开(公告)号：US20140248759A1

公开(公告)日：2014-09-04

申请号：US14275408

申请日：2014-05-12

申请人： Applied Materials, Inc.

发明人： Majeed A. FOAD ,  Manoj VELLAIKAL ,  Kartik SANTHANAM

IPC分类号： H01L21/30 ,  H01L21/223

CPC分类号： H01L21/3003 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/31662

摘要： A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

摘要翻译： 公开了一种在注入工艺之后防止有毒气体形成的方法。 某些掺杂剂当植入设置在基材上的薄膜时，当暴露于水分时可能发生反应，形成有毒气体和/或可燃气体。 通过将掺杂的膜原位暴露于含氧化合物，浅层注入层堆叠的掺杂剂反应形成掺杂剂氧化物，从而减少潜在的有毒气体和/或可燃气体的形成。 或者，可以在植入膜上原位形成覆盖层以减少有毒气体和/或可燃气体的潜在产生。

公开(公告)号：US20170084456A1

公开(公告)日：2017-03-23

申请号：US15259489

申请日：2016-09-08

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Peter STONE ,  Teng-fang KUO ,  Ping Han HSIEH ,  Manoj VELLAIKAL

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US20180138038A1

公开(公告)日：2018-05-17

申请号：US15853397

申请日：2017-12-22

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Peter STONE ,  Teng-fang KUO ,  Ping Han HSIEH ,  Manoj VELLAIKAL

IPC分类号： H01L21/02 ,  H01L21/687 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US20190172712A1

公开(公告)日：2019-06-06

申请号：US16266485

申请日：2019-02-04

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Peter STONE ,  Teng-fang KUO ,  Ping Han HSIEH ,  Manoj VELLAIKAL

IPC分类号： H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US20140000686A1

公开(公告)日：2014-01-02

申请号：US13794238

申请日：2013-03-11

申请人： Applied Materials, Inc.

发明人： Hemant P. MUNGEKAR ,  Jeffrey L. FRANKLIN ,  Yi ZHENG ,  Lin ZHANG ,  Manoj VELLAIKAL

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02167 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Embodiments of the invention relate to methods for fabricating a passivation layer stack for photovoltaic devices. In one embodiment, the passivation layer stack comprises a first dielectric layer of AlxOy (or SiOx) and a second dielectric layer of SixNy having a refractive index less than 2.1. The passivation layer stack has contact openings formed therethrough by a series of pulsed laser beams having a wavelength of about 300-700 nm and a pulse width of about 0.01 nanosecond to about 3 nanoseconds. Lowering the refractive index of SixNy capping AlxOy (or SiOx) in the passivation layer stack makes pulsed laser beams less selective since the SixNy absorbs less laser energy. Therefore, desired regions of the entire passivation layer stack can be removed smoothly in a single pass of pulsed laser beams at a shorter wavelength without causing damage to the neighborhood of the passivation layer stack.

摘要翻译： 本发明的实施例涉及制造用于光伏器件的钝化层堆叠的方法。 在一个实施例中，钝化层堆叠包括Al x O y（或SiO x）的第一电介质层和具有小于2.1的折射率的SixNy的第二电介质层。 钝化层堆叠具有通过一系列具有约300-700nm的波长和约0.01纳秒至约3纳秒的脉冲宽度的脉冲激光束形成的接触开口。 降低钝化层堆叠中SixNy封盖AlxOy（或SiOx）的折射率使得脉冲激光束的选择性降低，因为SixNy吸收较少的激光能量。 因此，可以在短波长的脉冲激光束的单次通过中平滑地去除整个钝化层堆叠的期望区域，而不会损坏钝化层堆叠的附近。