公开(公告)号：US11532464B2

公开(公告)日：2022-12-20

申请号：US15898133

申请日：2018-02-15

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Shinobu Abe ,  Keita Kuwahara ,  Chang Hee Shin ,  Su Ho Cho

IPC: H01J37/32

Abstract: An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.