公开(公告)号：US11532464B2

公开(公告)日：2022-12-20

申请号：US15898133

申请日：2018-02-15

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Shinobu Abe ,  Keita Kuwahara ,  Chang Hee Shin ,  Su Ho Cho

IPC: H01J37/32

Abstract: An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.

公开(公告)号：US10453728B2

公开(公告)日：2019-10-22

申请号：US15812922

申请日：2017-11-14

Applicant: Applied Materials, Inc.

Inventor： Kyung-Tae Kim ,  Su Ho Cho ,  Tsunehiko Kitamura ,  Shinobu Abe ,  Shuran Sheng

IPC: C23C16/00 ,  H01L21/677 ,  H01L31/18 ,  H01L21/67

Abstract: In one embodiment, a chamber is provided that includes a chamber body and a lid defining an interior volume, a frame within the interior volume, the frame sized to receive a plurality of substrates in a first orientation, and a rotational drive assembly coupled to the frame for rotating the frame and flipping each of the plurality of substrates to a second orientation that is different than the first orientation.

公开(公告)号：US20180082827A1

公开(公告)日：2018-03-22

申请号：US15273631

申请日：2016-09-22

Applicant: Applied Materials, Inc.

Inventor： Young-Jin Choi ,  Su Ho Cho ,  Beomsoo Park ,  Fei Peng ,  Soo Young Choi

IPC: H01J37/32 ,  G01N21/73 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32963 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  G01N21/73 ,  G01N2201/06113 ,  H01J37/32853 ,  H01J37/32926 ,  H01J2237/335

Abstract: Embodiments provide systems, methods and apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber. Embodiments include a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within a processing chamber during a cleaning process; and a lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from the selected area during the cleaning process. The selected area is chosen based on being the expected location of the last cleaning reaction during the cleaning process within the processing chamber (e.g., a corner in a rectangular chamber). Numerous other aspects are provided.

公开(公告)号：US10047440B2

公开(公告)日：2018-08-14

申请号：US15256054

申请日：2016-09-02

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Su Ho Cho

IPC: C23C16/52 ,  H01L21/02 ,  C23C16/24 ,  C23C16/455 ,  C23C16/515 ,  C23C16/509 ,  H01J37/32

Abstract: The present disclosure generally relates to an improved method for forming low resistivity crystalline silicon films for display devices. The processing chamber in which the low resistivity crystalline silicon film is formed is pressurized to a predetermined pressure and a radio frequency power at a predetermined power level is delivered to the processing chamber. In addition, feeding locations of one or more VHF power generator and controlling of each VHF power generator via phase modulation and sweeping allows for plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns produced by the chamber, due to the standing wave effect. Diffuser plate having two curved surfaces helps improve crystallinity uniformity.

公开(公告)号：US10043641B2

公开(公告)日：2018-08-07

申请号：US15273631

申请日：2016-09-22

Applicant: Applied Materials, Inc.

Inventor： Young-Jin Choi ,  Su Ho Cho ,  Beomsoo Park ,  Fei Peng ,  Soo Young Choi

IPC: H01J37/32 ,  G01N21/73 ,  C23C16/50 ,  C23C16/455

Abstract: Embodiments provide systems, methods and apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber. Embodiments include a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within a processing chamber during a cleaning process; and a lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from the selected area during the cleaning process. The selected area is chosen based on being the expected location of the last cleaning reaction during the cleaning process within the processing chamber (e.g., a corner in a rectangular chamber). Numerous other aspects are provided.