SUBSTRATE PROCESSING SYSTEM FOR MANUFACTURING TANDEM CELL STRUCTURES

    公开(公告)号:US20240379896A1

    公开(公告)日:2024-11-14

    申请号:US18656825

    申请日:2024-05-07

    Abstract: A substrate processing system includes two or more process tools including multiple process chambers to perform a corresponding substrate processing procedure and a substrate transport to transport substrates between the two or more process tools. The system further includes a control system to cause one or more first layers to be deposited on a substrate in one or more first process chambers to form a first cell of a tandem cell structure. The control system is further to cause the substrate to be transported from the one or more first process chambers to one or more second process chambers. A combination process tool includes the one or more second process chambers. The control system is further to cause one or more second layers to be deposited on the substrate in the one or more second process chambers to form a second cell of the tandem cell structure.

    Reactor design for large-area VHF plasma processing with improved uniformity

    公开(公告)号:US11532464B2

    公开(公告)日:2022-12-20

    申请号:US15898133

    申请日:2018-02-15

    Abstract: An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.

    Shadow frame support
    5.
    发明授权

    公开(公告)号:US09708709B2

    公开(公告)日:2017-07-18

    申请号:US14037719

    申请日:2013-09-26

    CPC classification number: C23C16/4405 H01J37/32449 H01J37/32862

    Abstract: The present invention generally provides a processing chamber having shadow frame supports that direct cleaning gas flow to the corners of the chamber. The shadow frame supports are disposed along part of the chamber walls, thus leaving the corners unoccupied. During cleaning, the shadow frame is disposed in a way that it rests on both the substrate support and the shadow frame supports. Therefore, the cleaning gas flowing along the chamber walls is blocked by the shadow frame supports and the cleaning gas is forced to the corners since the shadow frame supports do not extend to the corners.

Patent Agency Ranking