公开(公告)号：US12037682B2

公开(公告)日：2024-07-16

申请号：US17814653

申请日：2022-07-25

Applicant: Applied Materials, Inc.

Inventor： Peiqi Wang ,  Cheng Cheng ,  Kai Wu ,  Insu Ha ,  Sang Jin Lee

IPC: C23C16/06 ,  C23C16/04 ,  C23C16/38 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/38 ,  C23C16/042 ,  C23C16/45553 ,  C23C16/56

Abstract: A method of forming a structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The method includes disposing a nucleation layer along sidewalls of the opening, wherein nucleation layer includes boron and tungsten. Disposing the fill layer over the nucleation layer within the opening, wherein a tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less, wherein a tungsten-containing layer has a thickness of about 200 Å to about 600 Å, and wherein a tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.