公开(公告)号：US11798845B2

公开(公告)日：2023-10-24

申请号：US17082602

申请日：2020-10-28

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Min Heon ,  Wei Min Chan ,  Tom Ho Wing Yu ,  Peiqi Wang ,  Ju Ik Kang ,  Feihu Wang ,  Nobuyuki Sasaki ,  Chunming Zhou

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/04

CPC classification number: H01L21/76879 ,  C23C16/045 ,  H01L21/0262

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US12037682B2

公开(公告)日：2024-07-16

申请号：US17814653

申请日：2022-07-25

Applicant: Applied Materials, Inc.

Inventor： Peiqi Wang ,  Cheng Cheng ,  Kai Wu ,  Insu Ha ,  Sang Jin Lee

IPC: C23C16/06 ,  C23C16/04 ,  C23C16/38 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/38 ,  C23C16/042 ,  C23C16/45553 ,  C23C16/56

Abstract: A method of forming a structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The method includes disposing a nucleation layer along sidewalls of the opening, wherein nucleation layer includes boron and tungsten. Disposing the fill layer over the nucleation layer within the opening, wherein a tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less, wherein a tungsten-containing layer has a thickness of about 200 Å to about 600 Å, and wherein a tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

公开(公告)号：US12094773B2

公开(公告)日：2024-09-17

申请号：US17857341

申请日：2022-07-05

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Min Heon ,  Wei Min Chan ,  Tom Ho Wing Yu ,  Peiqi Wang ,  Ju Ik Kang ,  Feihu Wang ,  Nobuyuki Sasaki ,  Chunming Zhou

IPC: H01L21/768 ,  C23C16/04 ,  H01L21/02

CPC classification number: H01L21/76879 ,  C23C16/045 ,  H01L21/0262

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US11939668B2

公开(公告)日：2024-03-26

申请号：US17729943

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Mohammed Jaheer Sherfudeen ,  David Matthew Santi ,  Jallepally Ravi ,  Peiqi Wang ,  Kai Wu

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/08 ,  C23C16/45523 ,  C23C16/458

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.