公开(公告)号：US11450511B2

公开(公告)日：2022-09-20

申请号：US17137121

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Lizhong Sun ,  Yi Yang ,  Jian Janson Chen ,  Chong Ma ,  Xiaodong Yang

IPC: H01J37/32 ,  H01J37/34

Abstract: Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of the pedestal. The cover is constructed with multiple electrodes such as, for example, a first electrode, a second electrode, and a third electrode. The second electrode is positioned between and electrically separated from the first electrode and the second electrode. A substrate stress profile tuner is electrically connected to the first electrode, the second electrode, and the third electrode and configured to independently adjust an RF voltage level of at least the second electrode and the third electrode relative to RF ground to produce a more uniform film stress profile.

公开(公告)号：US12249484B2

公开(公告)日：2025-03-11

申请号：US17554645

申请日：2021-12-17

Applicant: Applied Materials, Inc.

Inventor： Jian Janson Chen ,  Yi Yang ,  Chong Ma ,  Yuan Xue

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505

Abstract: Methods and apparatus for controlling plasma in a process chamber leverage an RF termination filter which provides an RF path to ground. In some embodiments, an apparatus may include a DC filter configured to be electrically connected between a DC power supply and electrodes embedded in an electrostatic chuck where the DC filter is configured to block DC current from the DC power supply from flowing through the DC filter and an RF termination filter configured to be electrically connected between the DC filter and an RF ground of the process chamber where the RF termination filter is configured to adjust an impedance of the electrodes relative to the RF ground.