公开(公告)号：US11784032B2

公开(公告)日：2023-10-10

申请号：US17285074

申请日：2018-11-14

Applicant: Applied Materials, Inc.

Inventor： Lizhong Sun ,  Xiaodong Yang ,  Yufei Zhou ,  Yi Yang

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3408 ,  H01J2237/332

Abstract: A chamber includes a target (16) and a magnetron (50) disposed over the target (16). The magnetron (50) includes a plurality of magnets (52, 54). The magnetron (50) has a longitudinal dimension and a lateral dimension. The longitudinal dimension of the magnetron (50) is tilted with respect to the target (16) so the distances between magnets (52, 54) and the target (16) vary. As the magnetron (50) rotates during operation, the strength of the magnetic field produced by the magnetron (50) is an average of the various strengths of magnetic fields produced by the magnets (52, 54). The averaging of the strengths of the magnetic fields leads to uniform film properties and uniform target erosion.

公开(公告)号：US11170998B2

公开(公告)日：2021-11-09

申请号：US16811901

申请日：2020-03-06

Applicant: Applied Materials, Inc.

Inventor： Lizhong Sun ,  Xiaodong Yang ,  Mark Covington ,  Vivek Vinit ,  Vishal Agrawal

IPC: H01L21/02 ,  H01L21/768

Abstract: The present disclosure provides methods for forming a metal containing material onto a substrate with good film uniformity and stress profile across the substrate. In one embodiment, a method of sputter depositing a metal containing layer on a substrate includes supplying a gas mixture into a processing chamber, forming a first portion of a metal containing layer on a substrate, transferring the substrate from the processing chamber, rotating the substrate, transferring the substrate back to the processing chamber, and forming a second portion of the metal containing layer on the first portion of the metal containing layer.

公开(公告)号：US11450511B2

公开(公告)日：2022-09-20

申请号：US17137121

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Lizhong Sun ,  Yi Yang ,  Jian Janson Chen ,  Chong Ma ,  Xiaodong Yang

IPC: H01J37/32 ,  H01J37/34

Abstract: Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of the pedestal. The cover is constructed with multiple electrodes such as, for example, a first electrode, a second electrode, and a third electrode. The second electrode is positioned between and electrically separated from the first electrode and the second electrode. A substrate stress profile tuner is electrically connected to the first electrode, the second electrode, and the third electrode and configured to independently adjust an RF voltage level of at least the second electrode and the third electrode relative to RF ground to produce a more uniform film stress profile.