公开(公告)号：US12249484B2

公开(公告)日：2025-03-11

申请号：US17554645

申请日：2021-12-17

Applicant: Applied Materials, Inc.

Inventor： Jian Janson Chen ,  Yi Yang ,  Chong Ma ,  Yuan Xue

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505

Abstract: Methods and apparatus for controlling plasma in a process chamber leverage an RF termination filter which provides an RF path to ground. In some embodiments, an apparatus may include a DC filter configured to be electrically connected between a DC power supply and electrodes embedded in an electrostatic chuck where the DC filter is configured to block DC current from the DC power supply from flowing through the DC filter and an RF termination filter configured to be electrically connected between the DC filter and an RF ground of the process chamber where the RF termination filter is configured to adjust an impedance of the electrodes relative to the RF ground.

公开(公告)号：US11621152B2

公开(公告)日：2023-04-04

申请号：US17714502

申请日：2022-04-06

Applicant: Applied Materials, Inc.

Inventor： Soundarrajan Jembulingam ,  Jian Janson Chen ,  Jeonghoon Oh

IPC: H01J37/34 ,  C23C14/34

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2.

公开(公告)号：US11508563B1

公开(公告)日：2022-11-22

申请号：US17327955

申请日：2021-05-24

Applicant: Applied Materials, Inc.

Inventor： Soundarrajan Jembulingam ,  Jian Janson Chen ,  Jeonghoon Oh

IPC: H01J37/34 ,  C23C14/34

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2.

公开(公告)号：US11450511B2

公开(公告)日：2022-09-20

申请号：US17137121

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Lizhong Sun ,  Yi Yang ,  Jian Janson Chen ,  Chong Ma ,  Xiaodong Yang

IPC: H01J37/32 ,  H01J37/34

Abstract: Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of the pedestal. The cover is constructed with multiple electrodes such as, for example, a first electrode, a second electrode, and a third electrode. The second electrode is positioned between and electrically separated from the first electrode and the second electrode. A substrate stress profile tuner is electrically connected to the first electrode, the second electrode, and the third electrode and configured to independently adjust an RF voltage level of at least the second electrode and the third electrode relative to RF ground to produce a more uniform film stress profile.