公开(公告)号：US20200227258A1

公开(公告)日：2020-07-16

申请号：US16597466

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Arkajit ROY BARMAN ,  Hidehiro KOJIRI ,  Xinhai HAN ,  Deenesh PADHI ,  Chuan Ying WANG ,  Yue CHEN ,  Daemian Raj BENJAMIN RAJ ,  Nikhil Sudhindrarao JORAPUR ,  Vu Ngoc Tran NGUYEN ,  Miguel S. FUNG ,  Jose Angelo OLAVE ,  Thian Choi LIM

IPC: H01L21/02 ,  H01L21/67

Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.