公开(公告)号：US20170207069A1

公开(公告)日：2017-07-20

申请号：US15397883

申请日：2017-01-04

Applicant: Applied Materials, Inc.

Inventor： Sidharth BHATIA ,  Zhili ZUO ,  Hidehiro KOJIRI ,  Anjana M. PATEL ,  Song-Moon SUH ,  Ganesh BALASUBRAMANIAN

IPC: H01J37/32 ,  B08B5/00 ,  C23C16/44 ,  B08B9/00

Abstract: A method of cleaning a remote plasma source includes supplying a first cycle of one or more first cleaning gases to a remote plasma source. The method includes supplying a second cycle of one or more second cleaning gases to the remote plasma source. The method includes supplying one or more cooling fluids to one or more cooling conduits coupled with the remote plasma source.

公开(公告)号：US20200227258A1

公开(公告)日：2020-07-16

申请号：US16597466

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Arkajit ROY BARMAN ,  Hidehiro KOJIRI ,  Xinhai HAN ,  Deenesh PADHI ,  Chuan Ying WANG ,  Yue CHEN ,  Daemian Raj BENJAMIN RAJ ,  Nikhil Sudhindrarao JORAPUR ,  Vu Ngoc Tran NGUYEN ,  Miguel S. FUNG ,  Jose Angelo OLAVE ,  Thian Choi LIM

IPC: H01L21/02 ,  H01L21/67

Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.