公开(公告)号：US20150096589A1

公开(公告)日：2015-04-09

申请号：US14045786

申请日：2013-10-03

Applicant: Applied Materials, Inc.

Inventor： Danny Chien LU ,  Yi ZHOU ,  Changhun LEE

IPC: H01L21/02 ,  B08B7/00

CPC classification number: H01L21/02071 ,  B08B3/00 ,  C23G5/00 ,  H01J37/32082 ,  H01J37/32357

Abstract: Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having refractory metal portions disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate in a processing chamber, the substrate having a refractory metal disposed thereon, forming a process gas comprising water vapor, maintaining a process pressure in the processing chamber above about 0.5 Torr, forming a plasma in the process gas to form an activated water vapor and exposing the refractory metal to the activated water vapor.

Abstract translation: 本发明的实施方案一般涉及使用水蒸汽等离子体处理去除和/或清洁其上设置有耐火金属部分的基底表面的方法。 在一个实施例中，用于清洁衬底表面的方法包括将衬底定位在处理室中，衬底具有设置在其上的难熔金属，形成包含水蒸气的工艺气体，将处理室中的工艺压力保持在约0.5以上 在工艺气体中形成等离子体以形成活化的水蒸气并将难熔金属暴露于活化的水蒸汽。