公开(公告)号：US20150064880A1

公开(公告)日：2015-03-05

申请号：US14015780

申请日：2013-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Wan KIM ,  Hun Sang KIM ,  Changhun LEE ,  Ho Jeong KIM ,  Yi ZHOU

IPC: H01L21/322

CPC classification number: H01L21/02057

Abstract: Methods for performing post etch treatments on silicon surfaces etched using halogen chemistry are provided. The methods may be performed in-situ a chamber in which the silicon surfaces where etch, ex-situ the chamber, or in a hybrid process that combines both in-situ and ex-situ post etch treatment processes. In one embodiment the post etch treatment process includes exposing a substrate having a silicon surface etched using halogen chemistry to a gas mixture comprising CxHy and oxygen, wherein x and y are integers, forming a plasma from the gas mixture, binding halogen residues with species comprising the plasma to form non-volatile halogen containing elements, and pumping the non-volatile halogen containing elements from a chamber containing the substrate.

Abstract translation: 提供了使用卤素化学法蚀刻的硅表面上进行后蚀刻处理的方法。 这些方法可以原位执行，其中硅表面在其中蚀刻，非原位的室或在组合原位和非原位后蚀刻处理工艺的混合工艺中。 在一个实施例中，后蚀刻处理工艺包括将具有使用卤素化学物质蚀刻的硅表面的衬底暴露于包含C x H y和氧的气体混合物，其中x和y是整数，从气体混合物形成等离子体，将卤素残基与包含 所述等离子体形成非挥发性含卤素元素，并且从含有所述基底的室泵送所述非挥发性含卤素元素。

公开(公告)号：US20150096589A1

公开(公告)日：2015-04-09

申请号：US14045786

申请日：2013-10-03

Applicant: Applied Materials, Inc.

Inventor： Danny Chien LU ,  Yi ZHOU ,  Changhun LEE

IPC: H01L21/02 ,  B08B7/00

CPC classification number: H01L21/02071 ,  B08B3/00 ,  C23G5/00 ,  H01J37/32082 ,  H01J37/32357

Abstract: Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having refractory metal portions disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate in a processing chamber, the substrate having a refractory metal disposed thereon, forming a process gas comprising water vapor, maintaining a process pressure in the processing chamber above about 0.5 Torr, forming a plasma in the process gas to form an activated water vapor and exposing the refractory metal to the activated water vapor.

Abstract translation: 本发明的实施方案一般涉及使用水蒸汽等离子体处理去除和/或清洁其上设置有耐火金属部分的基底表面的方法。 在一个实施例中，用于清洁衬底表面的方法包括将衬底定位在处理室中，衬底具有设置在其上的难熔金属，形成包含水蒸气的工艺气体，将处理室中的工艺压力保持在约0.5以上 在工艺气体中形成等离子体以形成活化的水蒸气并将难熔金属暴露于活化的水蒸汽。