公开(公告)号：US20240363357A1

公开(公告)日：2024-10-31

申请号：US18631384

申请日：2024-04-10

申请人： Applied Materials, Inc.

发明人： David H. Collins ,  Nobuyuki Takahashi ,  Pin Hian Lee ,  Rio Soedibyo ,  Sanggil Bae ,  Houssam Lazkani ,  Songkram Sonny Srivathanakul ,  Raman Gaire ,  Gopal Bajaj

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L23/00

CPC分类号： H01L21/31105 ,  H01L21/0217 ,  H01L21/02274 ,  H01L23/562

摘要： Embodiments of the present technology may include semiconductor processing methods. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor and a nitrogen-containing precursor. A substrate including one or more materials may be disposed within the processing region. The substrate may be characterized by a first bowing of the substrate. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-nitrogen-containing material on the substrate. The layer of silicon-and-nitrogen-containing material may be characterized by a tensile stress. Subsequent forming the layer of silicon-and-nitrogen-containing material, the substrate may be characterized by a second bowing of the substrate that is less than the first bowing of the substrate.