Chemical mechanical polishing with applied magnetic field

    公开(公告)号:US11787008B2

    公开(公告)日:2023-10-17

    申请号:US17127065

    申请日:2020-12-18

    CPC classification number: B24B37/046 B24B37/105 B24B37/20 B24B57/02

    Abstract: A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate-receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.

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