公开(公告)号：US20020084181A1

公开(公告)日：2002-07-04

申请号：US10037172

申请日：2001-11-07

Applicant: Applied Materials, Inc.

Inventor： Praburam Gopalraja ,  Sergio Edelstein ,  Avi Tepman ,  Peijun Ding ,  Debabrata Ghosh ,  Nirmalya Maity

IPC: C23C014/35 ,  C23C014/44

CPC classification number: C23C14/345 ,  C23C14/046 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

Abstract translation: 本发明提供一种通过PVD在衬底上实现适形步骤覆盖的方法和装置。 目标物提供用等离子体溅射然后电离的材料源。 通过使用例如感应线圈维持足够密集的等离子体来促进离子化。 然后将电离材料沉积在衬底上，其被偏压到负电压。 在处理期间提供给目标的信号包括负电压部分和零电压部分。 在负电压部分期间，离子被吸引到靶以引起溅射。 在零电压部分期间，终止来自靶的溅射，同时衬底上的偏压导致反溅射。 因此，负电压部分和零电压部分交替地在溅射步骤和反向溅射步骤之间循环。 可以通过调节信号的频率，室压力，提供给每个支撑构件的功率和其他工艺参数来控制膜的质量和均匀性。