公开(公告)号：US20040104119A1

公开(公告)日：2004-06-03

申请号：US10308848

申请日：2002-12-02

Applicant: Applied Materials, Inc.

Inventor： Sergio Edelstein ,  Peter Hey ,  Yezdi Dordi

IPC: C25D005/00 ,  C25D017/00

CPC classification number: C25D5/04 ,  C25D7/123

Abstract: A method and apparatus for plating a metal onto a substrate. The apparatus generally The apparatus generally includes a substrate support member configured to support a substrate during a plating process, a cathode clamp ring detachably positioned to circumscribe a perimeter of the substrate and a movable anode assembly disposed above the substrate, wherein the anode assembly is movable in a direction generally perpendicular the substrate. The apparatus generally further includes a fluid inlet formed through the anode assembly, the fluid inlet being configured to supply a plating solution to the processing area sufficient to electrically connect the anode assembly to the substrate. The method generally includes supplying a plating solution to a processing chamber, the processing chamber being defined by a movable anode assembly disposed above the substrate and a cathode clamp ring detachably positioned to circumscribe the perimeter of the substrate, wherein the plating solution is supplied at a rate sufficient to electrically connect the anode assembly to the substrate and plating a metal from the plating solution onto the substrate.

Abstract translation: 一种用于将金属电镀到基底上的方法和装置。 该装置通常包括：基板支撑构件，其被配置为在电镀过程期间支撑基板;阴极夹环，其可拆卸地定位成围绕基板的周边;以及可移动阳极组件，其设置在所述基板上方，其中所述阳极组件可移动 在大致垂直于衬底的方向上。 该设备通常还包括通过阳极组件形成的流体入口，流体入口被配置为向处理区域提供足以将阳极组件电连接到衬底的电镀溶液。 该方法通常包括向处理室供应电镀液，处理室由设置在基板上方的可移动阳极组件和可拆卸地定位成围绕衬底的周边的阴极夹环限定，其中电镀液以 足以将阳极组件电连接到衬底并将金属从电镀溶液镀覆到衬底上。

公开(公告)号：US20020084181A1

公开(公告)日：2002-07-04

申请号：US10037172

申请日：2001-11-07

Applicant: Applied Materials, Inc.

Inventor： Praburam Gopalraja ,  Sergio Edelstein ,  Avi Tepman ,  Peijun Ding ,  Debabrata Ghosh ,  Nirmalya Maity

IPC: C23C014/35 ,  C23C014/44

CPC classification number: C23C14/345 ,  C23C14/046 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

Abstract translation: 本发明提供一种通过PVD在衬底上实现适形步骤覆盖的方法和装置。 目标物提供用等离子体溅射然后电离的材料源。 通过使用例如感应线圈维持足够密集的等离子体来促进离子化。 然后将电离材料沉积在衬底上，其被偏压到负电压。 在处理期间提供给目标的信号包括负电压部分和零电压部分。 在负电压部分期间，离子被吸引到靶以引起溅射。 在零电压部分期间，终止来自靶的溅射，同时衬底上的偏压导致反溅射。 因此，负电压部分和零电压部分交替地在溅射步骤和反向溅射步骤之间循环。 可以通过调节信号的频率，室压力，提供给每个支撑构件的功率和其他工艺参数来控制膜的质量和均匀性。