公开(公告)号：US20240429105A1

公开(公告)日：2024-12-26

申请号：US18212136

申请日：2023-06-20

Applicant: Applied Materials, Inc.

Inventor： Dimitry KOUZMINOV ,  Vikram M. BHOSLE ,  Arun Ramaswamy SRIVATSA ,  Ming Hong YANG

IPC: H01L21/66 ,  G01N23/2258 ,  G01N33/00

Abstract: Disclosed herein are approaches for measuring lateral dopant concentration and distribution in high aspect radio trench structures. In one approach, a method may include providing a substrate including a plurality of alternating vertical structures and trenches, and removing a portion of the substrate to expose a sidewall of the first vertical structure of the plurality of structures. The method may further include directing a spectrometry beam into the sidewall of the first vertical structure to determine a dopant characteristic of the first vertical structure, wherein the spectrometry beam is delivered perpendicular to a plane defined by the sidewall of the first vertical structure.

公开(公告)号：US20240090111A1

公开(公告)日：2024-03-14

申请号：US17941473

申请日：2022-09-09

Applicant: Applied Materials, Inc.

Inventor： Ming Hong YANG ,  Dimitry KOUZMINOV ,  Arun Ramaswamy SRIVATSA

IPC: H05H1/00 ,  H01J37/32 ,  H01J37/34

CPC classification number: H05H1/0037 ,  H01J37/3244 ,  H01J37/3402 ,  G01N23/2258

Abstract: Methods leverage premixed gas mixtures to perform a metrology process on a substrate using an inline secondary ion mass spectrometry (SIMS) process. The premixed gas mixture of two or more gases is injected into a plasma chamber that is configured to produce sputtering ions for the inline SIMS process. The two or more gases produce non-metallic ion species which are compatible with downstream substrate fabrication processes and allow further fabrication to be performed on the substrate after the inline SIMS process has completed. The sputtering ions are ejected from the plasma chamber into a magnetic field. The intensity of the magnetic field is altered to select a single species of ions. The single species of ions are directed towards a surface of the substrate and secondary ions sputtered from the surface of the substrate by the selected species of ions are detected and analyzed.