公开(公告)号：US20250040186A1

公开(公告)日：2025-01-30

申请号：US18227275

申请日：2023-07-27

Applicant: Applied Materials, Inc.

Inventor： Yan ZHANG ,  Taegon KIM ,  Johannes M. VAN MEER ,  Vikram M. BHOSLE ,  Jae Young LEE ,  Naushad K. VARIAM

IPC: H01L29/423 ,  H01L21/768 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786

Abstract: Approaches herein provide devices and methods for forming gate-all-around transistors with improved gate spacer k-values. One method may include forming a gate-all-around (GAA) stack including a plurality of alternating first layers and second layers, and forming a source/drain (S/D) cavity through the plurality of alternating first layers and second layers. The method may further include forming an inner spacer in the S/D cavity, adjacent the plurality of alternating first layers and second layers, performing a first implant by directing fluorine ions to the GAA stack, through the S/D cavity, wherein the first implant is performed at a temperature greater than 30° Celsius and forming a S/D material in the S/D cavity following the first implant.

公开(公告)号：US20240429105A1

公开(公告)日：2024-12-26

申请号：US18212136

申请日：2023-06-20

Applicant: Applied Materials, Inc.

Inventor： Dimitry KOUZMINOV ,  Vikram M. BHOSLE ,  Arun Ramaswamy SRIVATSA ,  Ming Hong YANG

IPC: H01L21/66 ,  G01N23/2258 ,  G01N33/00

Abstract: Disclosed herein are approaches for measuring lateral dopant concentration and distribution in high aspect radio trench structures. In one approach, a method may include providing a substrate including a plurality of alternating vertical structures and trenches, and removing a portion of the substrate to expose a sidewall of the first vertical structure of the plurality of structures. The method may further include directing a spectrometry beam into the sidewall of the first vertical structure to determine a dopant characteristic of the first vertical structure, wherein the spectrometry beam is delivered perpendicular to a plane defined by the sidewall of the first vertical structure.