公开(公告)号：US12189299B2

公开(公告)日：2025-01-07

申请号：US18115145

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Ying-Chiao Wang ,  Thomas L Laidig ,  Chun-Chih Chuang ,  Frederick Lie ,  Chen-Yuan Hsieh ,  Chun-Cheng Yeh

IPC: G03F7/00

Abstract: A digital lithography system includes adjacent scan regions, exposure units located above the scan regions, a memory, and a processing device operatively coupled to the memory. The exposure units include a first exposure unit associated with a first scan region and a second exposure unit associated with a second scan region. The processing device is to initiate a digital lithography process to pattern a substrate disposed on a stage in accordance with instructions. The processing device is to further perform a first pass of the first exposure unit over a stitching region at an interface of the first scan region and the second scan region at a first time. The processing device is to further perform a second pass of the second exposure unit over the stitching region at a second time that varies from the first time by less than forty seconds.

公开(公告)号：US20240288778A1

公开(公告)日：2024-08-29

申请号：US18115145

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Ying-Chiao Wang ,  Thomas L Laidig ,  Chun-Chih Chuang ,  Frederick Lie ,  Chen-Yuan Hsieh ,  Chun-Cheng Yeh

IPC: G03F7/20

CPC classification number: G03F7/704 ,  G03F7/70458 ,  G03F7/70475 ,  G03F7/70525

Abstract: A digital lithography system includes adjacent scan regions, exposure units located above the scan regions, a memory, and a processing device operatively coupled to the memory. The exposure units include a first exposure unit associated with a first scan region and a second exposure unit associated with a second scan region. The processing device is to initiate a digital lithography process to pattern a substrate disposed on a stage in accordance with instructions. The processing device is to further perform a first pass of the first exposure unit over a stitching region at an interface of the first scan region and the second scan region at a first time. The processing device is to further perform a second pass of the second exposure unit over the stitching region at a second time that varies from the first time by less than forty seconds.

公开(公告)号：US11934107B1

公开(公告)日：2024-03-19

申请号：US17766873

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Shih-Hsien Lee ,  Tingwei Chiu ,  Frederick Lie ,  Jang Fung Chen

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70558 ,  G03F7/2051 ,  G03F7/70625

Abstract: Embodiments described herein relate to methods of forming layers using maskless based lithography. In these embodiments, the methods implement ladders of dose change such that a geometric shape can be divided into overlaying sections. The overlaying sections can include a different dose of each section such that taper control can be achieved. The taper can be achieved by manipulating the geometry “mask data” into overlaying sections that are exposed by various doses controlled by pixel blending (PB) exposure techniques. To perform the methods described herein, a maskless lithography tool is used. The maskless lithography tool includes a controller that performs software based “mask data” manipulation. As such, because the methods are performed by software with no mask, there is much more flexibility to tune the taper angles and/or photoresist thickness residuals for multi-tone/gray tone mask features without any additional mask cost and fabrication time, providing advantages over conventional lithography methods using masks.