公开(公告)号：US20220037204A1

公开(公告)日：2022-02-03

申请号：US16983402

申请日：2020-08-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenjing XU ,  Gang SHEN ,  Feng CHEN ,  Tae Hong HA

IPC: H01L21/768 ,  H01L23/532

Abstract: Methods and apparatus that forms a stabilization layer on copper-based material to inhibit formation of copper voids in the copper-based material. In some embodiments, a method of forming the stabilization layer on the copper-based material includes depositing a first stabilization layer on the copper-based material where the first stabilization layer forms a continuous film on the copper-based material and is formed of a first material that does not alloy with copper, depositing a second stabilization layer on the first stabilization layer where the second stabilization layer is formed from a second material that alloys with copper and where the first stabilization layer is configured to inhibit formation of voids in the copper-based material during subsequent high thermal budget processing.

公开(公告)号：US20220084882A1

公开(公告)日：2022-03-17

申请号：US17022058

申请日：2020-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Lanlan ZHONG ,  Fuhong ZHANG ,  Gang SHEN ,  Feng CHEN ,  Rui LI ,  Xiangjin XIE ,  Tae Hong HA ,  Xianmin TANG

IPC: H01L21/768 ,  C23C16/455 ,  G11B5/31

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

公开(公告)号：US20220403505A1

公开(公告)日：2022-12-22

申请号：US17348849

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Annamalai LAKSHMANAN ,  Jacqueline S. WRENCH ,  Feihu WANG ,  Yixiong YANG ,  Joung Joo LEE ,  Srinivas GANDIKOTA ,  Sang-heum KIM ,  Zhebo CHEN ,  Gang SHEN

IPC: C23C16/02 ,  C23C16/06 ,  C23C16/52 ,  C23C14/16 ,  C23C16/455 ,  C23C16/42 ,  C23C14/06 ,  C23C16/56 ,  C23C14/02 ,  C23C14/58

Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

公开(公告)号：US20210062330A1

公开(公告)日：2021-03-04

申请号：US17002296

申请日：2020-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenjing XU ,  Yufei HU ,  Gang SHEN ,  Feng CHEN

IPC: C23C16/06 ,  C23C16/52 ,  C23C16/455

Abstract: A method for capping a copper surface on a substrate. In embodiments, the methods include exposing a substrate including a copper surface and a dielectric surface to a cobalt precursor gas and a process gas including a reducing agent to selectively form a first cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, wherein a flow rate ratio of process gas to cobalt precursor gas is at least 300:1.